Semipolar amd nonpolar light-emitting devices

ABSTRACT

Aspects of the disclosure provide for mechanisms for fabricating nonpolar or semipolar light-emitting devices. In accordance with some embodiments, a light-emitting device may include: a first semiconductor layer comprising a first epitaxial layer of a group III-nitride material, a second semiconductor layer comprising at least one quantum well structure, and a third semiconductor layer comprising a second epitaxial layer of the group III-nitride material. The first epitaxial layer and the second epitaxial layer may be an n-type GaN layer and a p-type GaN layer, respectively. In some embodiments, a surface of the first epitaxial layer of the group III-nitride material is approximately parallel to a semipolar plane of the group III-nitride material. In some embodiments, a surface of the second semiconductor layer is approximately parallel to the semipolar plane of the group III-nitride material. The semipolar plane may be a (20 2 1), (20 21 ), (30 3 1), or (30 31 ) plane.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation-in-part of U.S. patent application Ser. No. 15/818,344, filed Nov. 20, 2017, which is incorporated herein in its entirety.

TECHNICAL FIELD

The implementations of the disclosure relate generally to fabrication of semiconductor devices and, more specifically, to fabricating semipolar or nonpolar light-emitting devices. The semipolar or nonpolar light emitting devices may be fabricated, for example, on stacking-fault-free semipolar or nonpolar group III-nitride substrates.

BACKGROUND

Group III-V materials (e.g., AlN, GaN, and InN) are suitable materials for fabrication of a variety of semiconductor devices. For example, gallium nitride (GaN) and other III-nitride materials have relatively wide band gaps and can be used to make electro-optic devices (e.g., light-emitting diodes (LEDs), laser diodes (LDs), etc.) that emit radiation in the green and blue regions of the visible spectrum. Group III nitride materials can also be used to fabricate high-power electronics because they exhibit higher breakdown voltages when used for fabricating integrated transistors.

SUMMARY

The following is a simplified summary of the disclosure in order to provide a basic understanding of some aspects of the disclosure. This summary is not an extensive overview of the disclosure. It is intended to neither identify key or critical elements of the disclosure, nor delineate any scope of the particular implementations of the disclosure or any scope of the claims. Its sole purpose is to present some concepts of the disclosure in a simplified form as a prelude to the more detailed description that is presented later.

In accordance with some embodiments of the present disclosure, a light-emitting device is provided. The light-emitting device may include: a first semiconductor layer including a first epitaxial layer of a group III-nitride material, wherein a surface of the first epitaxial layer of the group III-nitride material is approximately parallel to a semipolar plane of the group III-nitride material, and wherein the first epitaxial layer of the group III-nitride material is free of stacking faults; and a second semiconductor layer including at least one quantum well structure, wherein a surface of the second semiconductor layer is approximately parallel to the semipolar plane of the group III-nitride material.

In some embodiments, the semipolar plane comprises at least one of a (2021) plane, a (2021) plane, a (3031) plane, or a (3031) plane.

In some embodiments, the semipolar plane is oriented in a semipolar orientation within about 4 degrees of at least one of a (2021) orientation, a (2021) orientation, a (3031) orientation, or a (3031) orientation.

In some embodiments, the second semiconductor layer includes an active layer for emitting light with a peak emission wavelength between 400 nm and 550 nm.

In some embodiments, the second semiconductor layer includes an active layer for emitting light with a peak emission wavelength of 450 nm.

In some embodiments, a diameter of the first semiconductor layer is equal to or greater than 2 inches.

In some embodiments, the light-emitting device further includes a third semiconductor layer comprising a second epitaxial layer of the group III-nitride material, wherein the first epitaxial layer of the group III-nitride material is doped with a first conductive type impurity, and wherein the second epitaxial layer of the group III-nitride material is doped with a second conductive type impurity.

In some embodiments, the second semiconductor layer is positioned between the first semiconductor layer and the third semiconductor layer.

In some embodiments, the group III-nitride material includes gallium.

In some embodiments, the quantum well structure includes a plurality of quantum well layers comprising indium and a plurality of barrier layers.

In some embodiments, the second semiconductor layer is free of stacking faults.

In some embodiments, a reverse leakage current in the light-emitting device is equal to or less than 10⁻⁶ A when a reverse bias of −5 V is applied to the light-emitting device.

In accordance with some embodiments of the present disclosure, a method for fabricating the light-emitting device is provided. The method may include: growing, on the group III-nitride substrate comprising the group III-nitride material, the first semiconductor layer including the group III-nitride material along the semipolar orientation; and growing, on the first semiconductor layer of the group III-nitride material, the second semiconductor layer along the semipolar orientation, the second semiconductor layer including at least one quantum well structure.

In some embodiments, growing the second semiconductor layer comprises growing the active layer for emitting light with a peak emission wavelength between 400 nm and 550 nm.

In some embodiments, growing the second semiconductor layer comprises growing the active layer for emitting light with a peak emission wavelength between 495 nm and 575 nm.

In some embodiments, growing the second semiconductor layer includes growing an active layer for emitting light with a peak emission wavelength of 450 nm.

In some embodiments, growing the quantum well structure includes growing a plurality of quantum well layers comprising indium and a plurality of barrier layers.

In some embodiments, growing the first semiconductor layer includes growing the group III-nitride material along the semipolar orientation without introducing stacking faults.

In some embodiments, the method further includes: growing, on the second semiconductor layer, a third semiconductor layer comprising the group III-nitride material along the semipolar orientation, wherein growing the third semiconductor layer comprises growing the group III-nitride material along the semipolar orientation without introducing stacking faults.

In some embodiments, growing the first semiconductor layer includes growing the first epitaxial layer of the group III-nitride material doped with the first conductive type impurity; and wherein growing the third semiconductor layer comprises growing the second epitaxial layer of the group III-nitride material doped with the second conductive type impurity.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure will be understood more fully from the detailed description given below and from the accompanying drawings of various embodiments of the disclosure. The drawings, however, should not be taken to limit the disclosure to the specific embodiments, but are for explanation and understanding only.

FIGS. 1A, 1B, and 1C depict structures associated with a process for producing a group III-nitride substrate in accordance with some embodiments of the present disclosure.

FIG. 2A depicts a diagram illustrating an example of a growth template in accordance with some implementations of the disclosure.

FIGS. 2B and 2C depict structures associated with a process for providing a patterned foreign substrate in accordance with some embodiments of the present disclosure.

FIGS. 2D, 2E, 2F, and 2G depict structures associated with a process for masking selected surfaces of a patterned sapphire substrate in accordance with some embodiments of the present disclosure.

FIG. 2H depicts structures associated formation of a semiconductor layer in accordance with some embodiments of the present disclosure.

FIG. 2I is a scanning-electron micrograph showing gallium-polar semipolar GaN stripes formed on a portion of a patterned sapphire substrate in accordance with some embodiments of the present disclosure.

FIG. 3 is a scanning-electron micrograph showing a cross-section view of coalesced semipolar GaN formed on a patterned sapphire substrate in accordance with some embodiments of the present disclosure.

FIG. 4A is a transmission-electron micrograph showing stacking faults in a coalesced epitaxial layer of GaN on a patterned sapphire substrate in accordance with some embodiments of the present disclosure.

FIG. 4B depicts formation of semipolar group III-nitride crystals on growth surfaces of a patterned foreign substrate in accordance with some embodiments of the present disclosure.

FIG. 5 shows a cathodoluminescence image recorded from a coalesced epitaxial layer of semipolar GaN formed on a patterned sapphire substrate, according to some embodiments of the present disclosure.

FIGS. 6A, 6B, and 6C illustrate structures associated with growth of semipolar group III-nitride crystals from growth surfaces of a patterned sapphire substrate in accordance with some embodiments of the present disclosure.

FIG. 6D depicts a structure of reshaped group III-nitride crystals in accordance with some embodiments of the present disclosure.

FIGS. 6E and 6F depict examples of a regrown layer of semipolar group III-nitride materials in accordance with some embodiments of the present disclosure.

FIGS. 7A, 7B, and 7C illustrate structures associated with producing a substrate of nonpolar group III-nitride materials in accordance with some embodiments of the present disclosure.

FIG. 8 is a scanning electron micrograph of gallium-polar semipolar GaN regrown on a patterned sapphire substrate in accordance with some embodiments of the present disclosure.

FIG. 9 shows a cathodoluminescence image recorded from a coalesced epitaxial layer of semipolar GaN formed on a patterned sapphire substrate in accordance with some embodiments of the present disclosure.

FIG. 10 is a flow diagram illustrating a method for producing a group III-nitride substrate according to some embodiments of the present disclosure.

FIG. 11 is a flow diagram illustrating a method for producing a semiconductor layer of group III-nitride materials according to some embodiments of the present disclosure.

FIG. 12 depicts an example of a semiconductor device according to some embodiments of the present disclosure.

FIGS. 13A, 13B, 13C, and 13D depict structures associated with a process for producing a light-emitting device in accordance with some embodiments of the present disclosure.

FIGS. 14A and 14B depict top views of examples of light-emitting devices in accordance with some embodiments of the present disclosure.

FIG. 15 is a flow diagram illustrating a method for fabricating a light-emitting device according to some embodiments of the present disclosure.

FIG. 16A depicts an I-V curve showing current-voltage characteristics of a light-emitting device in accordance with some embodiments of the present disclosure.

FIG. 16B depicts electroluminescence (EL) spectra of a light-emitting device in accordance with some embodiments of the present disclosure.

DETAILED DESCRIPTION

Aspects of the disclosure provide for mechanisms for fabricating light-emitting devices on group III-nitride substrates with nonpolar or semipolar orientations. Examples of the semipolar orientations may include orientations with Miller indices of (2021), (2021), (3031), (3031), (1011), (1122), etc. Examples of the nonpolar orientations may include orientations with Miller indices of (1120), (1010), etc. The group III-nitride substrates may be free of and/or substantially free of stacking faults. The group III-nitride substrates may be fabricated on foreign substrates (e.g., sapphire substrates).

Conventional light-emitting diodes (LEDs) and laser diodes (LDs) are typically grown on c-plane GaN and may suffer from many limitations. For example, a high polarization field in conventional LEDs may lead to a reduced recombination efficiency, an increased barrier for hole injection, increased electron leakage, and Auger recombination due to increased career densities. The polar orientation of c-plane GaN may lead to strain-induced piezoelectric fields across InGaN/GaN quantum well structures due to the lattice-mismatch between InGaN and GaN. As a result, the conventional LEDs may exhibit a reduced overlap between electron and hole functions. This may lead to long radiative recombination times and low quantum efficiency, resulting in the quantum-confined Stark effect (QCSE). The conventional LEDs also suffer from efficiency droop, which may lead to a significant reduction in internal quantum efficiency (IQE) with increasing injection current.

Because it may be difficult to obtain high-quality substrates of GaN and other group III-nitride materials, a group III-nitride material may typically be heteroepitaxially grown on a foreign substrate of a different material. For example, GaN may be grown on a sapphire substrate. However, large lattice mismatches may exist between the foreign substrate and epitaxial layers of the group III-nitride material and may lead to formation of threading dislocations. This may deteriorate the quality of the semiconductor devices formed using the group III-nitride material.

Prior solutions for providing group III-nitride substrates typically involve growing bulk GaN crystal on a c-plane and cross-slicing the bulk GaN crystal to produce strips of the GaN crystal. The strips may be used as GaN wafers. The slicing direction is perpendicular to the c-plane. As a result, the sizes of the GaN bulk substrates produced using the prior solutions are limited to the thickness of the bulk GaN crystal. For example, a GaN bulk substrate produced using the prior solutions typically has a width of a few millimeters. As such, the GaN wafers produced using the prior solutions are difficult to scale-up and are not compatible with commercial LED applications that require wafers of large sizes (e.g., a diameter larger than 2 inches). Moreover, stacking faults may be present in the GaN wafers. The stacking faults may provide alternative recombination pathways for carriers and may adversely affect the performance of semiconductor devices manufactured on the GaN wafers.

Aspects of the disclosure address the above deficiencies and other deficiencies of the prior solutions by providing mechanisms for fabricating group-III nitride substrates with nonpolar or semipolar orientations. A group-III nitride substrate (e.g., a GaN substrate) produced in accordance with the present disclosure may be free of stacking faults and may have a large area suitable for fabrication of semiconductor devices. The group III-nitride substrate may have any suitable orientation, such as a semipolar orientation or a nonpolar orientation.

In some embodiments, the mechanisms according to the present disclosure may provide a growth template for fabrication of the group III-nitride substrate. The growth template may include a semiconductor layer of a group III-nitride material. The semiconductor layer may be formed on a foreign substrate (e.g., a sapphire substrate) using any suitable epitaxial growth technique. In some embodiments, the semiconductor layer may be formed by growing the group III-nitride material in a particular semipolar or nonpolar orientation utilizing an orientation-controlled epitaxy process.

In one implementation, growing the semiconductor layer may involve doping the semipolar conductor layer with a suitable dopant to accelerate a growth rate of facets that may result in stacking faults and/or to control the shape of semiconductor crystals grown in the semiconductor layer. The dopant may include, for example, antimony (Sb), germanium (Ge), bismuth (Bi), etc. The doped semiconductor layer may be free of or substantially free of stacking faults.

In another implementation, stacking faults may be present in one or more regions of the semiconductor layer (also referred to as the “stacking-fault regions”) during the growth of the semiconductor layer. The stacking faults may be removed (e.g., eliminated and/or minimized) from the semiconductor layer. For example, one or more of the stacking-fault regions may be removed from the semiconductor layer by selectively etching the semiconductor layer. One or more voids may be formed in the semiconductor layer due to the removal of the stacking-fault regions. The group III-nitride material may be regrown after the removal of the stacking-fault regions to fill the voids. The regrowth of the group III-nitride material may include, for example, growing facets of various orientations at various growth rates. For example, one or more facets of an orientation associated with the stacking-fault regions (e.g., a (0001) orientation) may be grown at a first growth rate while one or more facets associated with other orientations (e.g., (1011), (1011), etc.) may be grown at a second growth rate. The first growth rate may be faster than the second growth rate.

The mechanisms can grow a layer of semipolar or nonpolar group III-nitride materials on the growth template. For example, an epitaxial layer of the group III-nitride material can be formed on the growth template utilizing any suitable epitaxial growth techniques, such as a hydride vapor phase epitaxy (HVPE) process, a molecular beam epitaxy (MBE) process, a metalorganic chemical vapor deposition (MOCVD) process, etc. In some embodiments, the mechanisms can separate the layer of the semipolar or nonpolar group III-nitride material from the growth template to produce the group III-nitride substrate.

The mechanisms may fabricate a semipolar or nonpolar light-emitting device on the group III-nitride substrate. The semipolar or nonpolar light-emitting device can emit light with a peak emission wavelength between 380 nanometer (nm) and 590 nm. For example, the light may be and/or include blue light (e.g., light with wavelengths between 450 nm and 495 nm), green light (e.g., light with wavelengths between 495 nm and 570 nm), yellow light (e.g., light with wavelengths between 570 nm and 590 nm), etc.

As referred to herein, “light-emitting device” may refer to any device that is capable of emitting light. Examples of the light-emitting device may include light-emitting diodes (LEDs), laser diodes (LDs), etc.

In some embodiments, the semipolar or nonpolar light-emitting device may be formed by growing one or more layers of semiconductor materials and/or any other suitable materials on the group III-nitride substrate. For example, a first epitaxial layer of the group III-nitride material may be formed on the group III-nitride substrate along a certain semipolar orientation (also referred to as the “first semipolar orientation”) or a certain nonpolar orientation (also referred to as the “first nonpolar orientation”). The first epitaxial layer of the group III-nitride material may be formed on a surface of the group III-nitride substrate that is parallel to and/or approximately parallel to a semipolar plane of the first semipolar orientation (also referred to as the “first semipolar plane”) or a nonpolar plane of the first nonpolar orientation (also referred to as the first “nonpolar plane”). The first epitaxial layer may be and/or include an n-doped GaN layer in some embodiments.

An active layer may be formed on the first epitaxial layer of the group III-nitride material. The active layer may include one or more quantum well structures for emitting light. Each of the quantum well structures may include one or more single quantum wells and/or multiple quantum wells. The active layer may be formed on a surface of the first semiconductor layer that is parallel to and/or approximately parallel to the first semipolar plane or the first nonpolar plane.

A second epitaxial layer of the group III-nitride material may be formed on the active layer along the first semipolar orientation or the first nonpolar orientation. The second epitaxial layer may be formed on a surface of the active layer that is parallel to and/or approximately parallel to the first semipolar plane or the first nonpolar plane. The second epitaxial layer may be a p-doped GaN layer in some embodiments.

By fabricating the light-emitting device on the group III-nitride substrate that is free of stacking faults, the mechanisms disclosed herein can fabricate semipolar or nonpolar light-emitting device without introducing stacking faults. For example, the growth of the first epitaxial layer of the group III-nitride material, the active layer, the second epitaxial layer of the group III-nitride material, and/or any other suitable component of the light-emitting device does not introduce stacking faults into the light-emitting device. In some embodiments, a reverse leakage current in the light-emitting device may be equal to or less than 10⁻⁶ A when a reverse bias of −5 V is applied to the light-emitting device.

Accordingly, aspects of the present disclosure provide for cost-effective and scalable mechanisms for producing semipolar or nonpolar light-emitting devices on bulk semipolar or nonpolar group III-nitride substrates (e.g., GaN substrates) that are free of stacking faults. The semipolar or nonpolar group III-nitride substrates may have any desirable semipolar orientation or nonpolar orientation. A diameter of a group III-nitride substrate according to some embodiments of the present disclosure may be greater than 2 inches (e.g., 4 inches, 6 inches, etc.).

By growing LEDs along a semipolar or nonpolar that can effectively reduce or eliminate the internal electric fields, the mechanisms disclosed herein can provide high-efficiency and high-brightness light-emitting devices that overcome the efficiency droop, QCSE, and other issues of the conventional LEDs. The light-emitting devices fabricated in accordance with the present disclosure may be used for lighting applications, display applications, wireless communication applications (e.g., optical transmitters), etc.

As referred to herein, a group III material may be any material that includes an element in the boron group, such as gallium (Ga), indium (In), thallium (Tl), aluminum (Al), and boron (B). A group III-nitride material may be any nitride material containing one or more group III materials, such as gallium nitride, aluminum nitride (AlN), aluminum gallium nitride (AlGaN), indium nitride (InN), indium gallium nitride (InGaN), etc. A group V material may be any material that includes an element in the nitrogen group, such as nitrogen (N), phosphorus (P), arsenic (As), etc. A group V material may be any material that includes an element in the nitrogen group, such as nitrogen (N), phosphorus (P), arsenic (As), etc. A group III-V material may be any material that includes a group III element and a group V element, such as aluminum nitride (AlN), gallium nitride (GaN), and indium nitride (InN).

As referred to herein, a semipolar plane may be a crystallographic plane oriented in a semipolar direction. The semipolar direction may be, for example, orientations with Miller indices of (2021), (2021), (3031), (3031), (1011), (1122), etc. A nonpolar plane may be a crystallographic plane oriented in a nonpolar direction. The nonpolar direction may be, for example, orientations with Miller indices of (1120), (1010), etc.

Examples of embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings. It should be understood that the following embodiments are given by way of illustration only to provide thorough understanding of the disclosure to those skilled in the art. Therefore, the present disclosure is not limited to the following embodiments and may be embodied in different ways. Further, it should be noted that the drawings are not to precise scale and some of the dimensions, such as width, length, thickness, and the like, can be exaggerated for clarity of description in the drawings. Like components are denoted by like reference numerals throughout the specification. Although discussed below primarily in reference to III-nitride materials, the mechanisms disclosed herein may be applied to other group III-V materials within the scope of the present disclosure.

FIGS. 1A-1C illustrate structures associated with a process for producing group III-nitride substrates in accordance with some embodiments of the present disclosure.

Turning to FIG. 1A, a growth template 110 may be provided. Growth template 110 may include one or more layers and may include any suitable material for growing a group III-nitride material (e.g., gallium nitride). For example, growth template 110 may include a substrate 111 and a semiconductor layer 120. The semiconductor layer 120 and the substrate 111 may or may not include different materials. In some embodiments, the substrate 111 may be a foreign substrate containing a material that is not contained in the semiconductor layer 120. For example, the semiconductor layer 120 may include an epitaxial layer of a group III-nitride material (e.g., gallium nitride). The foreign substrate 111 may contain any other suitable crystalline material that can be used to grow the group III-nitride material, such as sapphire, silicon carbide (SiC), silicon (Si), quartz, gallium arsenide (GaAs), aluminum nitride (AlN), etc. The substrate 111 may have any suitable size and/or shape for growth of group III-nitride materials. In some embodiments, the substrate 111 may be a large-area substrate (e.g., a substrate of a diameter that is equal to or larger than 2 inches).

The semiconductor layer 120 may contain one or more group III-nitride materials having any suitable crystallographic orientation, such as a nonpolar orientation or a semipolar orientation. Examples of the semipolar orientation may include (2021), (1011), (1122), etc. Examples of the nonpolar orientation may include (1120), (1010), etc. The semiconductor layer 120 may be free of and/or substantially free of stacking-faults. As referred to herein, a layer of a group III-nitride material may be regarded as being substantially free of stacking faults when the density of stacking faults in the layer of the group III-nitride material is not greater than a threshold.

While one layer of the semiconductor layer 120 is depicted in FIG. 1A, this is merely illustrative. The semiconductor layer 120 may include any suitable number of layers of group III-nitride materials and/or any other suitable crystalline material. In some embodiments, one or more other layers of crystalline materials (not shown) may be deposited between the substrate 111 and the semiconductor layer 120.

In some embodiments, the semiconductor layer 120 may include one or more surfaces exposing a crystallographic plane with a desired crystallographic orientation (e.g., a semipolar orientation or a nonpolar orientation). For example, a surface 125 of the semiconductor layer 120 may expose a semipolar plane or a nonpolar plane. The surface 125 may be parallel to or approximately parallel to a crystallographic plane with a desired semipolar orientation or a nonpolar orientation. The surface 125 is also referred to herein as the “process surface” of the semiconductor layer 120 and/or the growth template 110.

The substrate 111 may be and/or include a planar substrate, a patterned substrate, etc. In some embodiments, the substrate 111 may be and/or include a patterned substrate having an array of surface structures (e.g., ribs separated by trenches) patterned across a surface of the foreign substrate 111. The surface structures may include a plurality of planar and/or approximately planar surfaces (also referred to herein as the “planar surfaces”). One or more of the planar surfaces may be covered by a masking material that may prevent crystal growth of one or more group III-nitride materials. One or more of the planar surfaces are not covered by the masking material and may initiate epitaxial growth of a group III-nitride material (also referred to as the “crystal-growth surfaces”). In some embodiments, each of the crystal-growth surfaces may be parallel to or approximately parallel (e.g., within 10 mrad) to a particular crystallographic plane (e.g., a c-plane) of the foreign substrate 111. The patterned substrate may be produced, for example, by performing one or more operations described in connection with FIGS. 2A-2G below.

In some embodiments, the semiconductor layer 120 may be formed by growing one or more group III-nitride materials on the substrate 111 utilizing an orientation-controlled epitaxy process. For example, group III-nitride crystals may be grown with a selected crystallographic plane in a direction that is parallel to the crystal-growth surfaces of the substrate 111. The selected crystallographic plane may be, for example, a semipolar plane or a nonpolar plane (e.g., a (2021) plane for gallium-polar semipolar, a (2021) plane for nitrogen-polar semipolar). In some embodiments, the group III-nitride crystals may be grown from the crystal growth surfaces at distinct locations. The growth of the group III-nitride crystals may continue until the group III-nitride material coalesces above the patterned features on the substrate 111 and forms a continuous epitaxial layer. In some embodiments, one or more buffer layers may be formed on the substrate 111 prior to the growth of the epitaxial layer of the group III-nitride material. In some embodiments, the semiconductor layer 120 may be formed by performing one or more operations described in connection with FIGS. 2A-3 below.

In some embodiments, stacking faults may occur as the semiconductor layer 120 grows. For example, stacking faults may occur in a crystallographic orientation (e.g., the (0001) orientation). In some embodiments, the stacking faults may occur along an interface where the semiconductor layer 120 (e.g., a nitrogen-polar basal plane (0001) front) contacts the foreign substrate 111 (also referred to as the “heterogeneous interface”). In some embodiments, various quantities and/or densities of stacking faults may occur on various facets of the semiconductor layer 120 (e.g., facets of different orientations). For example, group III-nitride material crystals that form in a basal plane (e.g., a (0001) plane) may have more stacking faults than group III-nitride material crystals that form in another plane (e.g., a (1011) plane).

In one implementation, the stacking faults may be minimized and/or eliminated, for example, by terminating the growth of the semiconductor layer 120 (also referred to as the “initial growth”) after regions of stacking faults have formed and removing (e.g., selectively etching away) the regions of stacking faults. The removal of the regions of stacking faults may form one or more voids in the semiconductor layer 120. Regrowth of the group III-nitride material may be carried out to fill the voids. The regrowth of the group III-nitride may involve controlling facets of various orientations to be grown at various grown rates. In some embodiments, one or more facets associated with the stacking faults may be grown at a first rate while one or more facets associated no stacking faults or few stacking faults (e.g., a density of stacking faults less than a threshold) may be growth at a second growth rate. The first rate may be faster than the second growth rate. For example, the growth rate of the group III-nitride in one or more facets associated with the stacking faults (e.g., facets with one or more undesired orientations) may be accelerated. In some embodiments, the growth rate of the group III-nitride material in the facets with the undesired orientation(s) may be accelerated by introducing one or more suitable impurity dopants during the growth of the group-III nitride material. The dopants may include, for example, antimony (Sb), germanium (Ge), bismuth (Bi), etc. As another example, the growth of the group III-nitride material in one or more orientations that are not associated with the stacking faults may be slowed.

According to the Wulff principal, the facets with the highest growth rate may terminate more quickly than the facets with lower growth rates, and the crystal shape may be dominated by the facets with the lower growth rates. Elimination of a growth facet of an undesired orientation can remove it as a source of stacking-fault formation.

In another implementation, the initial growth of the semiconductor layer 120 on the substrate 111 may involve growing facets of various orientations at various growth rates. For example, the growth rate of the group III-nitride in one or more facets associated with the stacking faults (e.g., facets with one or more undesired orientations) may be greater than that of the group III-nitride material in one or more facets that are not associated with the stacking faults. The growth rate of the group III-nitride in the facets associated with the stacking faults may be accelerated by, for example, adding a suitable impurity dopant during the growth of the semiconductor layer 120. The impurity dopant may include Sb, Ge, or Bi in some embodiments. As such, the initial growth of the group III-nitride material does not introduce stacking faults in the semiconductor layer 120. In some embodiments, the stacking faults may be minimized and/or eliminated by performing one or more operations described in connection with FIGS. 6A-9 below.

Turning to FIG. 1B, an epitaxial layer 130 of the group III-nitride material may be formed on the growth template 110. The epitaxial layer 130 may be formed by growing the III-nitride material using any suitable epitaxial growth process, such as hydride vapor phase epitaxy (HVPE), molecular beam epitaxy (MBE), metalorganic chemical vapor deposition (MOCVD), etc. For example, the epitaxial layer 130 may be formed by growing an epitaxial layer of the group III-nitride material (e.g., GaN) in a HVPE reactor with suitable growth conditions (e.g., a suitable growth temperature, a suitable growth pressure, a suitable growth rate, etc.). The growth temperature of the epitaxial layer 130 may be, for example, a temperature of around 900 to 1100° C. The pressure for the growth of the epitaxial layer 130 may be, for example, between 50 to 500 mbar. The growth rate of epitaxial layer 130 may be, for example, between 1 to 200 μm/h.

The epitaxial layer 130 may be grown at a suitable growth rate for a certain time period to deposit an epitaxial layer of a desired thickness. The epitaxial layer 130 may have any suitable thickness, such as a thickness between 100 microns and 1 centimeter. In some embodiments, the thickness of the layer 130 may be greater than 100 microns. In some embodiments, the thickness of the layer 130 may be greater than 3000 microns. In some embodiments, the thickness of layer 130 can be greater than the thickness of layer 120. The size of the epitaxial layer 130 (e.g., a diameter of the epitaxial layer 130) may be the same as or substantially the same as the size of the foreign substrate 111 and/or the growth template 110 (e.g., a diameter of the foreign substrate 111 and/or the growth template 110). In some embodiments, a diameter of layer 130 may be 2 inches, 4 inches, 6 inches, and/or any other suitable value. In some embodiments, the diameter of the epitaxial layer 130 may be equal to or greater than 2 inches.

As illustrated in FIG. 1C, the epitaxial layer 130 may be separated from the growth template 110. In some embodiments, the epitaxial layer 130 may be separated from the growth template 110 along a longitudinal direction of the growth substrate 110. The longitudinal direction of the growth template 110 may be parallel to and/or approximately parallel to the process surface of the growth template 110.

In some embodiments, the epitaxial layer 130 may be separated from the growth template 110 along an interface 127 between the growth template 110 and the epitaxial layer 120. The interface may be defined by the surface 125 of the growth template 110 and a surface 132 of the epitaxial layer 130. The surface 125 and the surface 132 may or may not contact with each other. In some embodiments, one or more portions of the surface 125 contact with one or more portions of the surface 132. The interface may be parallel to or approximately parallel to the longitudinal direction of the growth substrate 110.

The separation of the semiconductor layer 120 from the growth template 110 may be achieved using any suitable technique or combination of techniques. For example, the epitaxial layer 130 may be separated from the growth template 100 using a wire saw (e.g., by slicing the interface or a portion of the epitaxial layer 130 along the longitudinal direction of the growth template 110). As another example, the layer 120 may be separated from the growth template 110 by laser lift-off and/or chemical lift-off.

In some embodiments, a semiconductor layer (not shown) including air voids may be formed between the growth template and the epitaxial layer 130 (also referred to as the “sacrificial layer”). In some embodiments, the sacrificial layer may be regarded as being part of the growth template 110. The epitaxial layer 130 may be separated from the growth template 110 via the sacrificial layer. For example, the epitaxial layer 130 can be separated from the growth template 110 by application of physical force to the sacrificial layer. As another example, the epitaxial layer 130 can be separated from the sacrificial layer by chemical etching. In some embodiments, after separation of the epitaxial layer 130 from the growth template 110, the sacrificial layer can remain on the growth template 110.

Upon separation from the growth template 110, the epitaxial layer 130 may then be used as a free-standing group III-nitride substrate. The free-standing group III-nitride may have a wurtzite structure and may have a nonpolar or semipolar orientation. Each of the surfaces 132 and 134 of the epitaxial layer 130 and/or the group III-nitride substrate may be a continuous planar surface. The surfaces 132 and/or 134 may be parallel to or approximately parallel to a desired crystallographic plane of the group III-nitride material, such as a semipolar plane or a nonpolar plane. In some embodiments, the surfaces 132 and/or 134 may expose a single semipolar plane or a single nonpolar plane of the group III-nitride material.

The epitaxial layer 130 may be free of or substantially free of stacking faults. As referred to herein, an epitaxial layer of a group III-nitride material may be regarded as being substantially free of stacking faults when the density of stacking faults in the epitaxial layer of the group III-nitride material is not greater than a threshold. A device manufacturing process can be performed on the free-standing group III-nitride substrate to form LEDs and/or any other desired semiconductor device.

FIG. 2A depicts a diagram illustrating an example 200 of a growth template in accordance with some implementations of the disclosure. The growth template 200 of FIG. 2 may be the same as the growth template 110 of FIG. 1 in some embodiments.

As illustrated in FIG. 2A, the growth template 200 may include an epitaxial layer 120 of III-nitride material formed over a foreign substrate 111. The semiconductor layer 120 of FIGS. 1A-1C may be and/or include the epitaxial layer 120 in some embodiments. The substrate 111 of FIGS. 1A-1C may be and/or include the foreign substrate 111 in some embodiments. The foreign substrate 111 may include any crystalline material that is suitable for growth of the III-nitride material thereon. For example, the foreign substrate 111 may include sapphire, silicon, silicon carbide, gallium-arsenide, etc.

In some embodiments, the foreign substrate 111 can be a patterned substrate having an array of surface structures 205 (e.g., ribs separated by trenches) patterned across a surface of the substrate 111. The surface structures 205 and substrate 111 may comprise a plurality of planar and/or approximately planar surfaces (also referred to herein as the “planar surfaces”). One or more of the planar surfaces may be covered by a masking material 140 that may prevent crystal growth from regions of the substrate. One or more of the planar surfaces may be slightly curved, in some embodiments and need not be straight as depicted. The planar surfaces may be oriented in one or more directions. Multiple planar surfaces may be oriented in different directions in some embodiments. For example, surface normal vectors may point in different directions, which may be crystallographic orientations in some implementations of the present disclosure.

According to some embodiments, one or more of the planar surfaces of the foreign substrate 111 (e.g., surfaces 115) are not covered by the masking material 140 and may serve as crystal-growth surfaces. The crystal-growth surfaces 115 may initiate epitaxial growth of a group III-nitride material, whereas the masking material 140 may inhibit growth of the III-nitride material. The crystal-growth surfaces 115 may be parallel and/or approximately parallel (e.g., within 10 mrad) to a c-plane facet (e.g., a (0001) facet) of the substrate 111 according to some embodiments, having a normal direction [0001] depicted by the arrow 135 in FIG. 2A. The crystal-growth surfaces 115 may be perpendicular to (90°) or inclined at an angle θ between 0° and 90° with respect to a surface of the foreign substrate 111 (e.g., a substrate surface 108 as depicted in FIG. 2B).

Group III-nitride semiconductor may be grown from the crystal-growth surfaces 115. The growth of the group III-nitride semiconductor may initiate at distinct locations and may continue until the group III-nitride semiconductor coalesces above the patterned features on the foreign substrate 111 and form a continuous epitaxial layer. The group III-nitride semiconductor may extend partially or entirely across the foreign substrate 111 and may form a planar surface 125 as illustrated in FIGS. 1A-2A.

An etching process may be selected (e.g., tailoring etching conditions) to achieve a desired inclination angle θ of the crystal-growth surfaces 115 with respect to the substrate surface of the sapphire substrate 111. In some embodiments, the inclination angle θ is made to be approximately the same as the angle of the sapphire's c-plane facet, which determines an orientation of the subsequently-grown III-nitride material. In this manner, any crystallographic plane of the III-nitride material may be made approximately parallel to or inclined at a desired angle with respect to a finished process surface of the substrate on which integrated circuit devices may be formed. The surface 125 in FIG. 2A is depicted as being parallel to a process surface 108 of the sapphire substrate 111 into which patterns are formed.

FIGS. 2B-2C depict structures associated with a method for forming a patterned foreign substrate, according to some embodiments of the present disclosure. The patterned foreign substrate may be, for example, a pattered sapphire substrate. An initially unetched substrate 111 (e.g., an unetched sapphire substrate) may be cut with a particular crystallographic orientation based on a desired crystallographic orientation of a group III-nitride layer to be formed on the substrate 111. The desired crystallographic orientation of the group III-nitride layer may be any semipolar orientation or nonpolar orientation. For example, to facilitate growth of a group III-nitride layer with a (2021) semipolar orientation, an initially unetched sapphire substrate 111 may be cut so that its (2243) plane is approximately parallel to a top surface 108 of the sapphire substrate 111. A resist 210 may be deposited and patterned on the surface of the sapphire substrate 111. The resist may be patterned as a periodic grating, according to some embodiments, so that bars of resist 210 may extend along the surface of the substrate (into the page as depicted in FIG. 2B). The resist pattern may be aligned to a crystallographic orientation of the sapphire substrate, so that the bars of resist 210 run in a direction that is approximately normal (e.g., within 10 mrad) to the (1100) plane of the sapphire substrate 111. In one implementation, the resist 210 may be a soft resist (e.g., a polymeric resist). In another implementation, the resist 210 may be a hard resist (e.g., patterned inorganic material). In some cases, the resist may be patterned to have sloping side walls 215, as depicted in the FIG. 2B. The resist 210 may be patterned via photolithography, interferometric lithography, and/or nay other suitable patterning process.

As illustrated in FIG. 2B, a dry etching process (e.g., a reactive ion etching (RIE) process) may be used to etch the sapphire substrate 111. The etching process may be anisotropic or semi-anisotropic. According to some embodiments, the etching process may be semi-selective, in that it etches some of the resist 210, while primarily etching the substrate 111. In a semi-selective etch, as the etching of the sapphire substrate 111 proceeds, the resist 210 may etch back in addition to trenches being etched into the substrate. In some embodiments, a chlorine-based etchant may be used for etching the sapphire. Examples of etch gases for sapphire may include BCl₃, Cl₃, and Ar or combination thereof. An etch pressure may be between 10 mTorr and 100 mTorr. In some implementations, a small amount of an etchant for the resist (e.g., O₂ for a polymeric resist) may be included as an etchant gas to etch back some of the resist 210.

Other etchants or etching processes may be used in other embodiments depending on the material used for the resist and/or on the substrate material. In some implementations, an etchant for the sapphire substrate may partially etch a resist 210. For example, when silicon (Si) is used as the substrate, a strong base solution (such as KOH, NaOH, etc.) may be used to anisotropically wet-etch the Si and expose (111) facets from which GaN may be grown. The (111) facets may be exposed in grooves that are produced by the wet etching. The (111) facets may be oriented at any angle between 0° and 90° with respect to a planar surface of the Si substrate.

The result of partially etching back the resist while the trenches are being etched may create sloped sidewalls 212 inclined at an angle θ along the trenches in the sapphire substrate 111, as depicted in FIG. 2B. Instead of the sidewalls being orientated 90° with respect to the unetched surface of the sapphire substrate 111, the sidewalls may be oriented between 0° and 90°, or between approximately these values, according to some embodiments. In some cases, the sidewalls may be oriented between 60° and 80°, or between approximately these values. In some cases, the sidewalls may be oriented between 65° and 75°, or between approximately these values. The slope of the etched sapphire sidewalls 212 may be controlled by adjusting the etch rate of the resist 210 (e.g., adjusting a concentration of etchant for the resist) and/or adjusting the slope of the sidewalls 215 of the resist 210 (e.g., adjusting exposure and development conditions for patterning the resist) and/or adjusting etch parameters for the sapphire etch.

According to some embodiments, a spacing or pitch P of the trenches etched into the sapphire may be between 0.25 micrometers (μm) and 10 μm, or between approximately these values. In some embodiments, the spacing between trenches may not be periodic. According to some embodiments, an etch depth D of the trenches may be between 50 nanometers (nm) and 2 μm, or between approximately these values. The width of the trenches may be approximately equal to, or equal to, one-half the pitch P, in some embodiments. In other embodiments, the width of the trenches may be greater than, or less than, one-half the pitch P. After etching the trenches, any remaining resist may be removed from the substrate 111 using a dry etch, a solvent, or a substrate cleaning process that dissolves the resist 210.

As illustrated in FIG. 2D, a high-temperature conformal coating 220 may be formed over the surface of the substrate 111 in some embodiments. The high-temperature conformal coating 220 may comprise an oxide (e.g., a silicon oxide) and/or a nitride (e.g., a silicon nitride). In some embodiments, the high-temperature conformal coating 220 and may be formed by a high-temperature conformal deposition process. The temperature during deposition may be between 300° C. and 1000° C., or between approximately those temperatures. For example, an oxide may be deposited by a chemical vapor deposition (CVD) process, such as plasma-enhanced chemical vapor deposition (PECVD). In some implementations, the high-temperature conformal coating 220 may be deposited by an atomic layer deposition (ALD) process. The thickness of the conformal coating 220 may be between 10 nm and 50 nm, or between approximately these values, according to some embodiments. The conformal coating 220 may cover one or more patterned surfaces of the substrate 111. In some embodiments, the conformal coating 220 may cover all of the patterned surfaces of the substrate 111 as depicted in FIG. 2C. A conformal coating may have a uniform thickness, irrespective of the substrate surface's orientation, unlike a coating produced by e-beam evaporation, for example.

In some embodiments, a shadow evaporation may be performed to form a resist 230 over one or more portions of the high-temperature conformal coating 220. For example, as illustrated in FIGS. 2E-2F, the substrate 111 may be inclined at an angle with respect to a target in an electron-beam evaporation system. During the evaporation, evaporants 228 may be incident on exposed surfaces of the high-temperature conformal coating 220. One or more of the surfaces of the high-temperature conformal coating 220 (e.g., “shadowed surfaces” 225) may be hidden or screened from the incident evaporants 228 by an overlying surface. These shadowed surfaces 225 may not be coated by the evaporants 228. The evaporants may comprise metal (e.g., any one or combination of Cr, Ni, Al, Ti, Au, Ag) or any other material that may be used as evaporants.

In some embodiments, photolithography may be used to form a resist over selected surfaces of the conformal coating 220. Photolithography may involve several processing steps (e.g., resist deposition, exposure, and developing), and may involve an alignment of a photomask to the substrate features.

In some embodiments, a shadow evaporation may be used to form a hard resist 230 over selected surfaces of the coating 220 in one step without the need for alignment of a mask to the substrate, resulting in a structure as depicted in FIG. 2F. The shadowed surfaces 225, screened from the evaporant, may have an exposed oxide layer 220 covering the c-plane surfaces of the patterned sapphire substrate, but not include an overlayer of metal or other protective resist 230. A selective anisotropic dry etch may then be performed to remove the coating 220 from the shadowed surfaces 225 and expose the underlying sapphire. The dry etch may comprise a fluorine-based etchant for etching coating 220, according to some embodiments. The etching may expose the underlying crystal-growth surfaces 115 of the patterned sapphire substrate, as depicted in FIG. 2G. In some embodiments, a wet etch (e.g., a buffered oxide etch) may be used to remove an oxide coating 220 from the surface 225. In some implementations, a wet or dry etch may not be selective, and may be a timed etch. An etch that removes the coating 220 may, in some cases, partially etch the sapphire after removing the coating.

According to some embodiments, the resist 230 may be removed with a dry or wet etch process and/or a substrate-cleaning process. For example, a hard coating of metal (e.g., Cr) may be removed with a suitable metal etchant. In some implementations, the substrate may be cleaned in preparation for epitaxial growth of III-nitride material. For example, the substrate may be cleaned in acetone, methanol, and a piranha solution before loading into a metal-organic chemical vapor deposition reactor for subsequent crystal growth.

In some embodiments, a buffer layer may be formed at the exposed crystal-growth surfaces 115 of the patterned substrate 111 to facilitate growth of semipolar III-nitride materials of integrated-circuit-grade quality and of a desired polarity. The buffer layer may be formed utilizing one or more buffer layer processes to provide suitable growth of semipolar GaN of a desired polarity from the patterned substrate 111, such as a low-temperature (LT) aluminum nitride (AlN) process, a high-temperature AlN process, a low-temperature GaN buffer layer process, a low temperature AlGaN buffer layer process, etc.

For example, gallium-polar semipolar GaN may be grown from the patterned substrate 111 utilizing a first buffer-layer process. In the first buffer-layer process, the substrate 111 may be subjected to a cleaning process followed by a low-temperature GaN buffer layer growth process, which may be carried out in the same growth reactor. The cleaning process may comprise heating the substrate to between 1000° C. and 1200° C., or between approximately these values, in a hydrogen (H₂) ambient or any other suitable ambient. In some embodiments, the buffer layer may be formed under GaN epitaxial growth conditions at temperatures between 400° C. and 650° C., or between approximately these values.

According to some embodiments, the low-temperature GaN buffer layer may be formed at a temperature of approximately 500° C. In some cases, the chamber pressure may be maintained between 50 mbar and 400 mbar, or between approximately these values. A flow rate of NH₃ may be between 1 slm and 4 slm, or between approximately these values, and a flow rate of trimethylgallium (TMGa) may be between 5 sccm and 50 sccm, or between approximately these values. The buffer layer may be grown to a desired thickness. For example, a thickness of the buffer layer may be between 10 nm and 50 nm, or between approximately these values, in some embodiments.

In some embodiments, a low-temperature GaN buffer layer heated to above 900° C. may diffuse more readily than a low-temperature AlN layer. In some embodiments, a low-temperature GaN buffer layer may migrate and redistribute from other oxide-covered surfaces of the substrate 111 to the exposed c-plane crystal-growth surfaces 115. This redistribution can promote selective growth of GaN at the crystal-growth surfaces. In some implementations, a low-temperature AlN buffer layer may be used prior to forming gallium-polar semipolar GaN. For example, the first buffer layer process above may be used with trimethylaluminum (TMAl) substituted for TMGa.

After growth of a low-temperature buffer layer according to the first buffer layer process, the temperature of the substrate may be ramped up for high-temperature growth of gallium-polar semipolar GaN from the crystal-growth surfaces. According to some embodiments, the low-temperature GaN buffer layer may be annealed for a period of time at a temperature between 850° C. and 1150° C., or between approximately these values, prior to introducing reactants for GaN growth. The annealing period may be between 1 minute and 10 minutes, or between approximately these values. High-temperature growth of gallium-polar semipolar GaN, for example, may occur at temperatures between 900° C. and 1150° C., or between approximately these values according to some implementations.

As another example, a second buffer layer process may be used to form nitrogen-polar semipolar GaN from the crystal growth surfaces 115. In the second buffer layer process, the substrate 111 may be thermally cleaned as described for the first buffer layer process. A nitridation process may then be performed to nitridate exposed crystal-growth surfaces 115. According to some embodiments, the nitridation process may comprise heating the substrate 111 to a temperature between 850° C. and 1110° C., or between approximately these values, in an ambient comprising a mixture of nitrogen (N₂) and ammonia (NH₃) gases. The N₂ flow rate may be between 2 slm and 8 slm, or between approximately these values. The NH₃ flow rate may be between 1 slm and 6 slm, or between approximately these values. The duration of nitridation may be between 0.5 minute and 5 minutes, or between approximately these values. Because of the nitridation, growth from the c-plane sapphire at the crystal-growth surfaces 115 would be least favorable compared to other surfaces of the patterned sapphire substrate 111. Therefore, the masking layer 140 (e.g., conformal oxide coating 220) may be formed to prevent unwanted crystal growth at the other sapphire surfaces.

Following nitridation, the substrate 111 may be subjected to a low-temperature GaN buffer layer process during which the substrate is heated to between 400° C. and 650° C., or between approximately these values in some implementations. In some cases, the substrate 111 may be heated to approximately 500° C., and the chamber pressure may be maintained between 100 mbar and 300 mbar, or between approximately these values. A flow rate of NH₃ may be between 0.5 slm and 5 slm, or between approximately these values. The flow rate of trimethylgallium (TMGa) may be between 5 sccm and 50 sccm, or between approximately these values. The LT GaN buffer layer may be grown to a thickness between 20 nm and 100 nm, or between approximately these values. In some embodiments, the buffer layer may be grown to a thickness greater than 50 nm and less than 100 nm. Improved growth conditions for nitrogen-polar semipolar GaN are found when the LT GaN buffer layer is formed under the following conditions: the chamber pressure is approximately 200 mbar, the NH₃ flow rate is approximately 1 slm, the Ga flow rate is approximately 40 sccm, and the buffer layer is grown to a thickness of approximately 80 nm.

After growth of a low-temperature GaN buffer layer according to the second buffer layer process, the temperature of the substrate may be ramped up for high-temperature growth of nitrogen-polar semipolar GaN from the crystal-growth surfaces. In some implementations, the low-temperature GaN buffer layer may be annealed prior to high-temperature growth of nitrogen-polar semipolar GaN material. The inventors have found improved results for subsequent growth of the nitrogen-polar semipolar GaN when the anneal time for the low-temperature GaN buffer layer is reduced compared to that used for growing gallium-polar semipolar GaN by up to a factor of three. During the anneal, the H₂ flow rate may be between 2 slm and 8 slm, or between approximately these values. The NH₃ flow rate may be between 0.5 slm and 6 slm, or between approximately these values. The duration of annealing may be between 0.5 minute and 3 minutes, or between approximately these values. The anneal temperature may be between 850° C. and 1150° C., or between approximately these values.

A difficulty of growing nitrogen-polar semipolar GaN from a low-temperature GaN buffer, as compared to growing gallium-polar semipolar GaN, is attributed to different transformations that occur during annealing of the buffer layers based on the polarities of the buffers, and the selectivity processes that occur on patterned sapphire substrates. For example, a Ga-polar GaN low-temperature GaN buffer layer may undergo a ripening recrystallization phase during annealing (which can be indicated by a nose-like peak in in-situ reflectance traces). During the recrystallization phase, decomposition and redeposition of the GaN may occur, which can favor the growth of Wurtzite phase nuclei on the substrate.

In contrast, and as can be seen by reflectance measurements, an N-polar GaN buffer layer may not undergo such a transformation, so that high-temperature GaN growth may proceed without a roughening-recovery phase with instant oscillations. For N-polar GaN, inspection of a buffer layer and initial growth stages by scanning-electron microscopy (SEM) and atomic-force microscopy (AFM) show an enhanced decomposition of the buffer layer. A rate-limiting process of GaN decomposition may be attributed to the formation of GaN at the substrate surface. The difference in decomposition rate between gallium and nitrogen polarities may be attributed to the bond configurations in the crystal structure, where in each bilayer the metal ion has only one back bond to nitrogen atoms (case of nitrogen-polarity) instead of three bonds (gallium-polarity). For a Ga-polar GaN buffer layer, an enabling factor for uniform crystal growth is redistribution of the low-temperature-GaN buffer layer onto the c-sapphire crystal-growth surfaces during annealing. Since redistribution does not occur readily with a nitridized sapphire surface and N-polar low-temperature-GaN buffer layer, sparse nucleation can result, and has been observed by the inventors. To improve subsequent crystal-growth uniformity for the N-polar case, the buffer layer thickness may be increased and the buffer layer anneal time may be reduced.

According to some embodiments, a buffer layer may be formed from a material different than a subsequently-grown material. For example, a buffer layer may be formed from any suitable III-nitride alloy (e.g., AlN, InN, AlGaN, InGaN, InAlGaN), whereas a subsequently-grown epitaxial layer may comprise GaN or other III-nitride material. In some implementations, a buffer layer may be formed from GaN, and a subsequently-grown semipolar epitaxial layer may comprise any other suitable III-nitride alloy. The formation of other semipolar materials may require the addition or substitution of other reactants, such as trimethylaluminum (TMAl) or triethylaluminum (TEAl) as sources of aluminum and trimethylindium (TMIn) or triethylindium (TEIn) as sources of indium. Reactants used for forming GaN epilayers may include triethylgallium (TEGa) or trimethylgallium (TMGa). The flow rates for these gases may be between 5 sccm and 300 sccm during growth or regrowth of a semipolar III-nitride epilayer.

After formation of a buffer layer, epitaxial growth of a semipolar III-nitride material may be carried out. As growth of semipolar III-nitride material (e.g., gallium-polar semipolar GaN) proceeds from the crystal-growth surfaces 115, islands of III-nitride crystals 250 may form across the surface of the patterned sapphire substrate 111, as depicted in FIG. 2H. Because of the inclination of the crystal growth surfaces 115 with respect to the patterned substrate 111, the III-nitride crystals 250 may grow with a selected crystallographic plane in a direction that is parallel to the original planar surface of the patterned substrate 111. Examples of the selected crystallographic plane may include (2021) (e.g., for gallium-polar semipolar GaN), (2021) for nitrogen-polar semipolar GaN). Crystallographic orientations for nitrogen-polar semipolar GaN crystals 250 are depicted by the axes 202 in FIG. 2H.

The epitaxial growth process for a group III-nitride material, after formation of the buffer layer, may comprise metal-organic chemical-vapor deposition (MOCVD), according to some embodiments. In some embodiments molecular-beam epitaxy (MBE) or hydride vapor phase epitaxy (HVPE) processes may be used. To form relatively thin layers, atomic layer deposition may be used. In an exemplary MOCVD process, the growth conditions may comprise a growth temperature between 980° C. and 1070° C., or between approximately those temperatures, and a chamber pressure between 50 mbar and 300 mbar, or between approximately those pressures. The flow rate of NH₃ gas may be between 0.5 slm and 4 slm, or between approximately those flow rates. The flow rate of trimethylgallium or triethylgallium may be between 10 sccm and 50 sccm, or between approximately those flow rates.

FIG. 2I is a scanning electron micrograph showing, in plan view, examples of gallium-polar semipolar GaN crystals 250 grown from a masked and patterned sapphire substrate, according to some embodiments. The patterned sapphire substrate comprises crystal-growth surfaces 115 spaced approximately 6 μm apart, and the etch depth D of trenches in the sapphire substrate is approximately 1 μm. The crystal-growth surfaces are oriented at approximately θ=75° with respect to the process surface of the substrate. Other surfaces on the patterned sapphire substrate were masked with a PECVD oxide, as described above in connection with FIGS. 2D-2G. A low-temperature GaN buffer layer approximately 20 nm thick was formed, without nitridation, on the crystal growth surfaces 115 of the substrate. In other embodiments, a low-temperature AlN buffer may be used. The growth conditions for the GaN buffer layer were: pressure of approximately 200 mbar, temperature of approximately 500° C., an NH3 flow of approximately 1 slm, and a TMGa flow rate of approximately 40 sccm. For a low-temperature AlN buffer layer, a TMAl flow rate of approximately 25 sccm may be used. Subsequently, gallium-polar semipolar GaN was grown under the following epitaxial growth conditions: a growth temperature of approximately 1030° C., a growth pressure of approximately 100 mbar, a flow rate of TMGa of approximately 40 sccm TMGa, and a flow rate of NH₃ at about approximately 1 slm. The micrograph in FIG. 2I shows that bars of GaN crystal 250 may be grown from the crystal-growth surfaces 115 with high spatial uniformity.

Epitaxial growth may be continued so that the III-nitride crystals 250 coalesce to form a continuous epitaxial semiconductor layer 120 over the patterned substrate 111 (e.g., as illustrated in FIG. 2A).

FIG. 3 is a scanning electron microscope (SEM) image of a growth template 300 for fabrication of group III-nitride materials according to some embodiments of the present disclosure. As illustrated, growth template 300 may include a semiconductor layer 120 of group III-nitride materials formed on a substrate 111. The semiconductor layer may include an epitaxial layer of semipolar group III-nitride materials (e.g., semipolar GaN). The semiconductor layer 120 may contain coalesced group III-nitride materials (e.g., coalesced semipolar GaN). The semiconductor layer 120 may have a suitable thickness. For example, a thickness of the epitaxial layer 120 may be approximately 8 microns. A thickness of the coalesced epitaxial layer may be between 100 nm and 20 microns, in some embodiments. In some embodiments, thicker layers of group III-nitride materials may be grown.

As illustrated in FIG. 3, an upper surface of the epitaxial layer 120 may have ridges 310 in some implementations. The ridges 310 may run parallel to the crystal growth surfaces 115. The formation of the ridges 310 may result from intersections of crystallographic growth planes of the group III-nitride materials (e.g., the (1010) and (1011) planes for growth of gallium-polar semipolar GaN). The formation of the ridges 310 may depend on a specific semipolar or nonpolar crystallographic orientation of the group III-nitride materials. For example, the ridges 310 may represent intersections of the (1010) and (1011) planes for growth of gallium-polar semipolar GaN (e.g., (2021) GaN).

In some embodiments, the growth template 300 may be planarized to form a process surface 125. The growth template 300 may be planarized using any suitable planarization techniques, such as chemical-mechanical polishing, grinding and polishing, etc. In some embodiments, the process surface 125 may be parallel to or approximately parallel to a semipolar crystallographic plane of the semiconductor layer 120 (a (2021) plane of the GaN semiconductor). In some embodiments, the process surface 125 may be inclined at an angle with respect to the semipolar crystallographic plane of the semiconductor layer 120.

Stacking faults may occur in one or more regions of the epitaxial layer 120 when the epitaxial layer 120 is formed on the substrate 111. For example, as illustrated in FIG. 4A, regions 410 of the epitaxial layer may contain stacking faults (also referred to as the “stacking-fault regions”). In some embodiments, the stacking faults may occur as the GaN crystal grows in the [0001] direction along a heterogeneous interface. Stacking-fault regions 410 may form as the islands of III-nitride crystals 250 grow from the crystal growth surfaces 115 on the substrate 111 over masked regions of the substrate 111 in the [0001] direction. The stacking-fault regions 410 may be separated by uniform regions 420 where the crystal forms in other directions and is free of or substantially free of stacking faults. In some embodiments, certain defects may be present in the uniform regions 420 at considerably lower density (e.g., having a density lower than a threshold).

The stacking faults may also be observed using cathodoluminescence (CL) measurements of an area of the epitaxial layer. In a CL measurement, energetic electrons impinge on the epitaxial layer and cause the layer to luminescence. Regions that contain defects may not luminesce and appear dark when viewed microscopically. FIG. 5 shows a cathodoluminescence (CL) image of a gallium-polar semipolar GaN epitaxial layer formed on a patterned sapphire substrate. As shown, the stacking fault regions 410 appear as dark bands running across the surface of the substrate. The spacing of the dark bands is approximately equal to the spacing of the crystal growth surfaces 115 on the patterned surface.

The stacking faults may adversely affect semiconductor devices fabricated on the epitaxial layer 120. One or more of the stacking-fault regions 410 may be minimized and/or eliminated using one or more processing techniques in accordance with the present disclosure. For example, the growth of the epitaxial layer 120 may be terminated after the stacking-fault regions have formed. The stacking-fault regions 410 may be removed (e.g., selectively etched away). The removal of the stacking-fault regions 410 may form one or more voids in the epitaxial layer 120. A subsequent selective-growth process may then be used to regrow the group III-nitride material to fill the voids. The selective-growth process may involve accelerating growth rates of one or more undesirable facets (e.g., the (0001) facets in the example of FIG. 4A and FIG. 4B) over the growth rate of other crystal growth facets (e.g., the (1010) and (1011) facets in this example). According to the Wulff principal, the crystal facets with the highest growth rate will terminate more quickly than facets with lower growth rates, and the crystal shape will be dominated by the facets with the lower growth rates. Elimination of the (0001) growth facets can remove it as a source of stacking-fault formation.

FIGS. 6A-6E show structures associated with a process for removing stacking-fault regions in epitaxial layers of III-nitride material formed over a foreign substrate. Although the example shown continues with a same semipolar orientation of GaN described above, the embodiments are not limited to only the depicted semipolar orientation. The processing steps may be applied to other orientations of group III-nitride materials (e.g., GaN) including nonpolar orientations. The other orientations may include, for example, (1122), (1120), (1011), (1010), and (3031) orientations. In some embodiments, facet orientations within 60 degrees of a nonpolar facet orientation, or approximately within this value, may be desirable for semiconductor device applications such as LEDs, lasers, and transistors

As illustrated in FIG. 6A, as the III-nitride crystals 250 grow as described in connection with FIGS. 2A-5, stacking-fault regions 410 may form in the [0001] direction along the (0001) facet. As the crystals 250 increase in size, well-defined facets may form on upper surfaces of the crystals. The facets may have various orientations. For example, as illustrated in FIG. 6B, the (1010) and (1011) facets may form on the upper surfaces. The stacking-fault regions 410 may increase in size as the group III-nitride crystals 250 expand across the substrate 111. Facets of various orientations may have different quantities and/or densities of stacking faults. For example, the semiconductor that forms in the [0001] direction may have significantly less or negligible stacking faults compared to the semiconductor that forms in the [0001] direction. In one implementation, the epitaxial growth of the group III-nitride material may continue until the group III-nitride crystals 250 coalesce, as depicted in FIG. 6C. In another implementation, the group III-nitride crystals 250 do not have to coalesce.

After the formation of stacking-fault regions 410, the growth of the group III-nitride materials may be terminated. The substrate 111 and/or crystals 250 may be selectively etched to remove the stacking faults and/or to reshape the group III-nitride crystals 250. For example, the selective etch may be and/or include a wet, anisotropic etch that may etch certain facets of a formed crystal 250 and stops on other facets of the crystal 250. For example, a wet potassium hydroxide (KOH) etch may be employed. The KOH concentration may be between 5% and 50% KOH in water by weight, or between approximately these values. The KOH solution may be heated to a suitable temperature (e.g., a temperature between 20° C. and 80° C., or between approximately these values). In some implementations, the KOH concentration may be between 20% and 50% KOH, or between approximately these values, in water by weight and the etching temperature may be between 30° C. and 80° C., or between approximately these values. The etching time may be between 1 minute and 60 minutes, depending on the size of the crystals 250, the etchant concentration, and the etching temperature. In some implementations where the same or different crystal orientations may be desired, other etchants may be used such as, but not limited to, sodium hydroxide (NaOH), sulfuric acid (H₂SO₄), phosphoric acid (H₃PO₄).

In some embodiments, the selective etch may stop on one or more facets of the crystal 250, so that the etch may self-terminate and the etch-back may not have to be precisely timed. For example, the KOH etch may rapidly etch the (0001) facets of the crystals 250 and effectively stop on the (1010), (1011), and (1011) facets. In some implementations, the etch rates for the (1010), (1011), and (1011) facets may be slower (e.g., at least ten times slower) than the etch rate for the (0001) facet. A resulting reshaped crystal structure (for gallium-semipolar GaN) is depicted in FIG. 6D. The remaining top-side facets may comprise the (1011) facet and the (1011) facet, according to some embodiments. The removal of the stacking-fault regions 410 and/or reshaping of the crystals 250 may form one or more voids 610 between the reshaped crystals 650. After the etch back and removal of the stacking-fault regions 410, the substrate may be cleaned in deionized water and a selective-growth process may be employed to regrow the group III-nitride material (e.g., GaN) on the reshaped crystals 650. The selective-growth may include growing GaN in which the growth rate of a selected facet is made faster than one or more other growth facets. Since the stacking faults are generated in the (0001) basal-planes of GaN during initial growth of this facet, it is desirable to reduce or eliminate (0001) basal-plane growth facet during regrowth in order to get rid of the stacking faults.

According to the theory of kinetic Wulff-plot, during the convex growth of a crystal, the facets with fast growth rates will disappear and the crystal shape will be dominated by the facets with slow growth rates. To eliminate and/or minimize facets that are associated with stacking faults (e.g., the (0001) facets) during the regrowth, the facets associated with the stacking faults and the facets associated with no or negligible stacking faults may be grown at various grown rates. For example, a first facet associated with a first density of stacking faults may be grown at a first growth rate while a second facet associated with a second density of stacking faults may be grown at a second growth rate. The first density of stacking faults may be greater than the second density of stacking faults. The first growth rate may be faster than the second growth rate. In some embodiments, the first facet may include the (0001) facet. The second facet may include, for example, the (1011) facet.

In some embodiments, the various growth rates may be achieved by accelerating the growth rate(s) of the facets associated with the stacking faults and/or reducing the growth rate(s) of the facets that are associated with no or negligible stacking faults. For example, the growth rate of the (0001) facet may be increased relative to the growth rate of at least the (1011) facet, so that the shape of the crystal 250 may be dominated by the (1011) facet and/or other facets grown at a relatively slow rate. The growth rate of the N-polar (0001) growth facet may be enhanced, for example, by adding in some impurity species during regrowth. Examples of the impurity species may include antimony (Sb), germanium (Ge), bismuth (Bi), etc. The resulting regrown crystals can then eliminate growth from a (0001) facet and form with stable growth facets (1011), (1010), and (1011), as illustrated in FIG. 6E. Regrowth or continued growth portions 670 of the crystals may include the impurity dopant. An example SEM image, regrown, gallium-polar semipolar GaN on a PSS is shown in FIG. 8. According to some embodiments, the regrowth may continue until the voids 610 are covered and/or the reshaped crystals 650 grow until they coalesce.

In some embodiments, the regrowth of the group III-nitride material (e.g., GaN) may include growing the group III-nitride material using a metal-organic chemical vapor deposition (MOCVD) process. The MOCVD process may be carried out under certain growth conditions. For example, the regrowth temperature may be between 950° C. and 1070° C., or between approximately these values. The pressure may be between 50 mbar and 400 mbar, or between approximately these values. The TMGa or TEGa flow rate may be between 10 μmol/min and 200 μmol/min, or between approximately these values. The NH₃ flow rate may be between 0.5 slm and 5 slm, or between approximately these values. The impurity doping level may be between 1×10¹⁷ cm⁻³ and 5×10¹⁹ cm⁻³, or between approximately these values. For lower and higher doping levels, stacking faults were observed to form. According to some embodiments, the doping range may be between 1×10¹⁸ cm⁻³ and 1×10¹⁹ cm⁻³, or between approximately these values.

In some embodiments, the impurity doping may be discontinued after the reshaped crystals 650 coalesce during the regrowth. A layer of a desired III-nitride material may then be grown. A thickness of the layer may be, for example, between 2 microns and 20 microns. The resulting epitaxial layer 680 may have ridges 310 as shown in FIG. 6F, but may have a greatly reduced density of stacking faults compared to the case shown in FIG. 3. For example, the density of stacking faults for the sample shown in FIG. 3 may be as high as 1×10⁶ cm⁻², and the density of stacking faults for epitaxial layers of III-nitride material produced according to the present embodiments may be no more than 10² cm⁻². According to some embodiments, the substrate may be subsequently planarized (e.g., using chemical-mechanical polishing) to remove the ridges 310 and produce a planar process surface parallel to the (2021) gallium-polar semipolar facet, for example.

FIGS. 7A, 7B, and 7C show structures associated with forming nonpolar group III-nitride materials. To grow a group III-nitride material (e.g., GaN) with a nonpolar orientation, a sapphire substrate 111 may be selected with its c-plane oriented perpendicular to the substrate surface. The sapphire substrate 111 may be patterned with vertical sidewalls that are approximately parallel to the sapphire substrate's c-plane. As depicted in FIG. 7A, crystals 720 of nonpolar GaN may be formed using growth techniques as described above from the crystal growth surfaces 715. As the crystals 720 grow, stacking-fault regions 410 may form in the [0001] direction as the crystal expands over the masked areas.

A subsequent etch may be performed to remove the stacking-fault regions 410 and to reshape the crystals, as depicted in FIG. 7B. The resulting growth facets may comprise the (1011), (1010), and (1011) facets. A subsequent regrowth with an impurity dopant as described above may be carried out to form stacking-fault free crystals 730, as indicated in FIG. 7C. Growth of the stacking-fault free crystals 730 may continue until they coalesce over the substrate 111. The dopant may be terminated and a thick layer of stacking-fault-free, nonpolar GaN may be formed over the substrate 111.

Although two different crystal orientations are shown in FIG. 6E and FIG. 7C, a semiconductor crystal may be formed in any orientation from polar to nonpolar and a final crystal facet need not be parallel to a process surface of the finished substrate. Any selected crystal facet may be either parallel to or oriented at a desired angle with respect to the process surface. The orientation of the epitaxial crystals is primarily determined by the cut of the sapphire substrate. In one implementation, the etched sidewalls 112 of the sapphire substrate may be parallel to or approximately parallel to the c-plane facet of the sapphire substrate. In another implementation, the etched sidewalls 112 may be inclined at a certain angle (e.g., as much as 5 degrees) with respect to the c-plane facet of the sapphire substrate.

When nitrogen-polar orientations of a group III-nitride material, such as GaN, are formed, stacking faults may or may not form at the (0001) growth facet. In a nitrogen-polar orientation, the (0001) growth facet may form away from a masked region and not along its surface. Instead, the (0001) growth facet may form along a masked surface and generate stacking faults. Accordingly, an impurity dopant may be used to increase the growth rate of the (0001) growth facet. In some cases, Sb, Ge, Bi, etc. may be added as a dopant within the ranges specified above to eliminate the (0001) growth face.

FIG. 8 is a SEM micrograph showing regrown, stacking-fault free crystals of gallium-polar semipolar GaN on a patterned sapphire substrate 111. The resulting growth facets after etch-back and regrowth with a Sb, Ge or Bi dopant are the (1011), (1010), and (1011) facets. Other orientations of the sapphire substrate may result in other resulting growth facets. For this example, the periodicity of patterns on the sapphire substrate 111 is approximately 6 microns. Other periodicities may be used in other embodiments. According to some implementations, the periodicity may be nanoscale, e.g., between 20 nm and 500 nm. With smaller periodicity, the portion of the epitaxial layer subjected to etch-back and regrowth with an impurity may be appreciably less than when the periodicity is on the order of 5 microns. A thinner portion of the GaN layer subjected to etch-back and regrowth may result in a lower defect density at the surface of a coalesced epitaxial layer that is microns thick.

The crystalline quality of a 7-micron thick epitaxial layer of (2021) GaN (shown in FIG. 6F) was characterized by cathodoluminescence (CL). A plan-view monochromatic CL image at emission wavelength of 365 nm is shown in FIG. 9. This image in comparison with the CL image of FIG. 5 shows that the periodic pattern of stacking faults (dark bands running across the GaN layer) is not present. The short discrete dark lines shown in FIG. 9 (marked by white arrows) may be associated with clusters of threading dislocations created at the interface between GaN and the sapphire substrate.

Although the methods and embodiments described above include steps of initial crystal growth, etch-back to remove stacking faults due the lateral growth of N-polar (0001) GaN facet over a heterogeneous surface and to reshape the initial crystals, and further growth of the reshaped crystals with an impurity dopant, the etch-back process may be omitted in some embodiments. In some embodiments, the initial growth of crystals (e.g., crystals 250 in FIG. 6A) on a patterned sapphire substrate with a suitable buffer layer may be carried out with an impurity dopant such as Sb, Ge, Bi, etc. Initial growth with the impurity dopant may eliminate the (0001) growth facet quickly and prevent the stacking fault regions 410 from forming during the initial stages of crystal growth. Instead, the initial crystals may form with the (1011), (1010), and (1011) facets as depicted in FIG. 6D. Growth with the impurity dopant may continue until the crystals coalesce, as depicted in FIG. 6E for example. An initial portion of the epitaxial layer that includes the initial growth crystals may be doped with the impurity dopant. After the growth crystals coalesce, the dopant may be discontinued for subsequent III-nitride growth that is substantially free of stacking faults.

FIG. 10 is a flow diagram illustrating an example 1000 of a method for producing a group III-nitride substrate according to some embodiments of the disclosure.

As illustrated, method 1000 may begin at block 1010 where a growth template may be provided for growing one or more group III-nitride materials. The growth template may include one or more layers of a group III-nitride material and/or any other suitable material. For example, the growth template may include an epitaxial layer of the group III-nitride material (e.g., GaN) formed on a foreign substrate (e.g., a sapphire substrate). In some embodiments, the growth template may be and/or include a growth template 110 as described in connection with FIGS. 1A-9 above.

In some embodiments, the growth template may be provided by performing one or more operations depicted in blocks 1012-1014.

At block 1012, a patterned foreign substrate may be provided. The patterned substrate may be formed using an initially unetched substrate. The orientation of the foreign substrate may be selected based on a desired crystallographic orientation of a semiconductor layer to be formed on the foreign substrate and/or an epitaxial relation between the semiconductor layer and the foreign substrate. For example, the foreign substrate may be cut so that a c-plane of the foreign substrate (e.g., a (0001) plane) is oriented with respect to a substrate surface (e.g., a top surface) of the foreign substrate to align with the (0001) plane of the semiconductor layer (e.g., the (0001) GaN plane) when a crystallographic plane of the semiconductor layer with the desired crystallographic orientation (e.g., the (2021) GaN plane) is parallel to the substrate surface. In a more particular example, a (2243) crystallographic plane of a sapphire substrate may be parallel to or approximately parallel to the substrate surface of the foreign substrate to facilitate growth of epitaxial layers of a group III-nitride material with a surface exposing a (2021) plane.

The patterned foreign substrate may include a plurality of surface structures (e.g., trenches and stripes) patterned across the substrate surface of the foreign substrate. The patterned foreign substrate may include one or more crystal-growth surfaces. The crystal-growth surfaces may be approximately parallel to a c-plane facet of the foreign substrate. In some embodiments, the foreign substrate may be provided by performing one or more operations described in connection with FIGS. 2A-2G above.

At block 1014, a semiconductor layer may be grown on the patterned substrate. The semiconductor layer may comprise one or more group III-nitride materials. The semiconductor layer may include one or more layers. For example, the semiconductor layer may include one or more buffer layers (e.g., an AlN buffer layer, a GaN buffer layer, a AlGaN buffer layer, etc.). As another example, the semiconductor layer may include an epitaxial layer of a group III-nitride material with a desired crystallographic orientation. In a more particular example, the semiconductor layer may include an epitaxial layer of semipolar or nonpolar GaN. A process surface of the semiconductor layer may be parallel to or approximately parallel to a semipolar plane or a nonpolar plane of the group III-nitride material (e.g., GaN). The process surface may be, for example, a surface of the semiconductor layer that does not contact with the foreign substrate. The semiconductor layer may be free of or substantially free of stacking faults.

In one implementation, growing the semiconductor layer may include growing facets of various orientations at various growth rates. For example, one or more facets of an undesired orientation (e.g., an orientation associated with stacking faults) may be grown at a growth rate that is greater than that of one or more other facets. In some embodiments, the various growth rates may be achieved by doping the semiconductor layer with a suitable dopant (e.g., Sb, Ge, Bi, etc.). In another implementation, growing the semiconductor layer may include growing an initial layer of the group III-nitride material that includes stacking faults and removing the stacking faults from the initial layer of the first layer of the group III-nitride material. Regrowth of the group III-nitride material may be carried out after the removal of the stacking faults. In some embodiments, the semiconductor layer may be formed by performing one or more operations as described in connection with FIG. 11 below.

At block 1020, an epitaxial layer of the group III-nitride material may be formed on the growth template. The epitaxial layer may be formed on the process surface of the semiconductor layer (also referred to as the process surface of the growth template). Growing the epitaxial layer of the group III-nitride material may include growing the group III-nitride material in a suitable growth direction, such as a semipolar orientation or a nonpolar orientation. In some embodiments, the growth of the epitaxial layer may include growing the group III-nitride material using an HVPE process, an MBE process, an MOVCD process, and/or any other suitable epitaxial growth process.

At block 1030, the epitaxial layer of the group III-nitride material may be separated from the growth template to form a substrate of the group III-nitride material. Upon separation from the growth template, the epitaxial layer of the group III-nitride material may be used as a free-standing substrate for fabrication of semiconductor devices (e.g., LEDs, LDs, etc.). The epitaxial layer of the group III-nitride material may be separated from the growth template in any suitable manner. For example, the epitaxial layer of the group III-nitride material may be separated from the growth template along a longitudinal direction of the growth template. As another example, the epitaxial layer of the group III-nitride material may be separated from the growth template along an interface between the epitaxial layer and the growth template. The interface may be defined by a surface of the growth template and a surface of the epitaxial layer. The surface of the growth template may or may not contact with the surface of the epitaxial layer. In one implementation, the epitaxial layer of the group III-nitride material may be separated from the growth template by slicing the growth template and/or the epitaxial layer (e.g., along the longitudinal direction of the growth template). In another implementation, the epitaxial layer of the group III-nitride material may be separated from the growth template by laser lift-off, chemical lift-off, etc.

FIG. 11 is a flow diagram illustrating an example 1100 of a method for producing a semiconductor layer of group III-nitride materials according to some embodiments of the disclosure.

At block 1110, one or more buffer layers may be formed on a foreign substrate. The foreign substrate may be and/or include a patterned substrate provided at block 1012. The buffer layers may be formed from any suitable group III-nitride materials and/or any other suitable material, such as AlN, InN, AlGaN, InGaN, InAlGaN, etc. In some embodiments, the buffer layer(s) may be formed at the exposed crystal-growth surfaces of the foreign substrate. The buffer layer(s) may include one or more low-temperature buffer layers described in connection with FIG. 2G and may be formed under one or more growth conditions described in connection with FIG. 2G. For example, an AlN buffer layer and/or a GaN buffer layer may be formed on the foreign substrate.

At block 1120, an epitaxial layer of a group III-nitride material may be formed. One or more regions of the epitaxial layer may include stacking faults. The epitaxial layer may be formed using any suitable epitaxial growth process, such as an MOVCD process, a HVPE process, an MBE process, etc.

The group III-nitride material (e.g., GaN) may be grown from the crystal-growth surfaces of the substrate. During the growth of the group III-nitride material, III-nitride crystals (e.g., islands of III-nitride crystals 250 of FIG. 2H) may form across the surface of the patterned substrate. In some embodiments, the III-nitride crystals may grow with a crystallographic plane approximately parallel to the original planar surface of the foreign substrate. The crystallographic plane may be a semipolar plane or a nonpolar plane. In some embodiments, the growth of the group III-nitride material may be carried out so that the III-nitride crystals may coalesce. The III-nitride crystals may form a continuous epitaxial layer across one or more regions of the substrate and/or the entire substrate.

The group III-nitride material may be grown for a suitable period of time to achieve a desired thickness of the epitaxial layer. For example, the epitaxial layer of the group III-nitride material may be grown to a thickness so that a density of defects of the epitaxial layer is not greater than a predetermined threshold.

In some embodiments, at block 1130, the epitaxial layer may be planarized. For example, a process surface of the epitaxial layer (e.g., an upper surface of the epitaxial layer) may be planarized to remove ridges formed due to intersections of crystallographic planes (e.g., the (1010) and (1011) planes for semi-gallium-polar GaN). The planarization may remove one or more portions of the epitaxial layer. The epitaxial layer may be planarized, for example, by chemical-mechanical polishing the process surface of the epitaxial layer. In some embodiments, regrowth of the III-nitride material may be carried out on the planarized surface to form a regrowth layer.

At block 1140, one or more stacking-fault regions of the epitaxial layer may be removed. For example, the epitaxial layer may be selectively etched to remove one or more regions of the epitaxial layer that contain stacking faults and/or to reshape the group III-nitride crystals grown on the growth template. In some embodiments, various facets of the III-nitride crystals may or may not be etched at the same etch rate. For example, facets with various crystallographic orientations may be etched at various etch rates. More particularly, for example, one or more facets associated with the stacking-fault regions (also referred to as the “first facet(s)”) may be etched at a first etch rate while one or more facets that are not associated with the stacking-fault regions (e.g., also referred to as the “second facet(s)”) may be etched at a second etch rate. The first etch rate may be faster than the second etch rate. The first facet(s) associated with the stacking fault regions may be facet(s) with a first crystallographic orientation that associated with formation of the stacking faults (e.g., a (0001) direction). The second facet(s) that are not associated with the stacking-fault regions may be facet(s) with one or more other crystallographic orientations is different from the first crystallographic orientation (e.g., a second crystallographic orientation of (1010), a third crystallographic orientation of (1011), a fourth crystallographic orientation of (1011), etc.).

At block 1150, the group III-nitride material may be regrown. The regrowth of the group III-nitride material may fill one or more voids in the semiconductor layer formed by the removal of the stacking-faults regions. The regrowth of the group III-nitride material may include growing facets with various crystallographic orientations at various growth rates. For example, a first facet with the first crystallographic orientation may be grown at a first growth rate. A second facet with a second crystallographic orientation may be grown at a second growth rate. The first crystallographic orientation and/or the first facet may be associated with a first quantity and/or density of stacking faults (e.g., a quantity and/or density of stacking faults greater than a threshold). The second crystallographic orientation and/or the second facet may be associated with a second quantity and/or density of stacking faults (e.g., a quantity and/or density of stacking faults is not greater than a threshold). In some embodiments in which the first quantity and/or density of stacking faults is greater than the second quantity and/or density of stacking faults, the first growth rate may be faster than the second growth rate. In one implementation, the first growth rate may be greater than the second growth rate.

In some embodiments, the various growth rates may be controlled by accelerating the growth rate of one or more facets associated with the stacking faults. For example, the first growth rate of the first facet may be accelerated by adding one or more suitable dopants (e.g., Sb, Ge, Bi, etc.) during the regrowth of the group III-nitride material.

FIG. 12 is a schematic diagram illustrating an example 1200 of a semiconductor device in accordance with some embodiments of the present disclosure. As illustrated, semiconductor device 1200 may include a substrate 1210, a first semiconductor layer 1220, a second semiconductor layer 1230, and a third semiconductor layer 1240. In some embodiments, the semiconductor device 1200 may be and/or include a light-emitting device.

The substrate 1210 may be and/or include a semipolar or nonpolar group III-nitride substrate. The substrate 1210 may contain a group III-nitride material (e.g., GaN) having a semipolar orientation (also referred to as the “first semipolar orientation”) or a nonpolar orientation (also referred to as the “first nonpolar orientation”). The first semipolar orientation may be, for example, an orientation with Miller indices of (2021), (2021), (3031), (3031), (1011), (1122), or (1122) (including off-axis orientations within ±4 degrees). In some embodiments, the first semipolar orientation may be within about 4 degrees of at least one of a (2021) orientation, a (2021) orientation, a (3031) orientation, or a (3031) orientation. The first nonpolar orientation may be, for example, an orientation with Miller indices of (1120) or (1010) (including off-axis orientations within ±4 degrees).

The semipolar or nonpolar group III-nitride substrate may be free of and/or substantially free of stacking faults. The semipolar or nonpolar group III-nitride substrate may be a bulk substrate that has a diameter equal to or greater than 2 inches. In one implementation, the substrate 1210 may include a group III-nitride substrate formed on a foreign substrate (e.g., a sapphire substrate). The substrate 1210 may be and/or include, for example, the growth template 110 and/or the group III-nitride substrate 130 of FIGS. 1A-1C.

A surface 1215 of the substrate 1210 may expose a semipolar plane (also referred to as the “first semipolar plane”) or a nonpolar plane of the group III-V material (also referred to as the “first nonpolar plane”). The first semipolar plane may be, for example, a (2021) plane, a (2021) plane, a (3031) plane, a (3031) plane, a (1011) plane, a (1122) plane, a (1122) plane, etc. The first nonpolar plane may be, for example, a (1120) plane, a (1010) plane, etc. In some embodiments, the first semipolar plane may be a crystallographic plane oriented in the first semipolar orientation. The first nonpolar plane may be a crystallographic plane oriented in the first nonpolar orientation. The surface 1215 may be and/or include surfaces 125, 132, and/or 134 of FIGS. 1A-1C.

One or more layers of semiconductor materials and/or any other material may be grown on the surface 1215 of the substrate 1200 to fabricate the semiconductor device 1200. For example, as shown in FIG. 12, the first semiconductor layer 1220, the second semiconductor layer 1230, and the third semiconductor layer 1240 may be grown on the substrate 1210. Each of the first semiconductor layer 1220, the second semiconductor layer 1230, and/or the third semiconductor layer 1240 may have a desirable semipolar or nonpolar orientation, such as the first semipolar orientation or the first nonpolar orientation. Each of the first semiconductor layer 1220, the second semiconductor layer 1230, and/or the third semiconductor layer 1240 may include one or more surfaces exposing a crystallographic plane with a desired crystallographic orientation (e.g., a semipolar orientation or a nonpolar orientation). The surfaces 1225, 1235, and/or 1245 may be parallel to and/or approximately parallel to the surface 1215 and may be parallel to and/or approximately parallel to the first semipolar plane or the first nonpolar plane. In some embodiments, the surface 1215 may be free of and/or substantially free of stacking faults. The growth of the first semiconductor layer 1220, the second semiconductor layer 1230, and/or the third semiconductor layer 1240 does not introduce stacking faults. As such, the semiconductor device 1200 may be free of and/or substantially free of stacking faults.

The first semiconductor layer 1220 may include one or more epitaxial layers of group III-nitride materials and any other suitable semiconductor material. For example, the first semiconductor layer 1220 may include an epitaxial layer of a group III-nitride material (also referred to as the “first epitaxial layer of the group III-nitride material”). The group III-nitride material may be, for example, GaN. The first epitaxial layer of the group III-nitride material may include the group III-nitride material doped with a first conductive type impurity. The first conductive type impurity may be an n-type impurity in some embodiments. The first epitaxial layer of the group III-nitride material may be a Si-doped GaN layer or a Ge-doped GaN layer in some embodiments. The first semiconductor layer 1220 may contain the group III-nitride material having the first semipolar orientation or the first nonpolar orientation.

The second semiconductor layer 1230 may include one or more layers of semiconductor materials and/or any other suitable material for emitting light. For example, the semiconductor layer 1230 may include an active layer comprising one or more quantum well structures for emitting light. Each of the quantum well structures may be and/or include a single quantum well structure (SQW) and/or a multi-quantum well (MQW) structure. Each of the quantum well structures may include one or more quantum well layers and barrier layers (not shown in FIG. 12). The quantum well layers and barrier layers may be alternately stacked on one another. The quantum well layers may comprise indium (e.g., indium gallium nitride). Each of the quantum well layers may be an undoped layer of indium gallium nitride (InGaN) that is not intentionally doped with impurities. Each of the barrier layers may be an undoped layer of the group III-nitride material that is not intentionally doped with impurities. A pair of a barrier layer (e.g., a GaN layer) and a quantum well layer (e.g., an InGaN layer) may be regarded as being a quantum well structure. The second semiconductor layer 1230 may contain any suitable number of quantum well structures. For example, the number of the quantum well structures (e.g., the number of pairs of InGaN and GaN layers) may be 3, 4, 5, etc. The active layer and/or the quantum well structures may be formed along the first semipolar direction or the first nonpolar direction.

When energized, the second semiconductor layer 1230 may produce light. For example, when an electrical current passes through the active layer, electrons from the first semiconductor layer 1220 (e.g., an n-doped GaN layer) may combine in the active layer with holes from the third semiconductor layer 1240 (e.g., a p-doped GaN layer). The combination of the electrons and the holes may generate light. The light may have a peak emission wavelength between 200 nm and 700 nm. In some embodiments, the light may have a peak emission wavelength between 380 nm and 590 nm. For example, the light may be and/or include blue light (e.g., light with wavelengths between 450 nm and 495 nm), green light (e.g., light with wavelengths between 495 nm and 570 nm), yellow light (e.g., light with wavelengths between 570 nm and 590 nm), etc. In some embodiments, the second semiconductor layer 1230 may emit light with wavelengths between 500 nm and 550 nm. In some embodiments, the second semiconductor layer 1230 may emit light with wavelength between 400 nm and 550 nm. In some embodiments, the second semiconductor layer 1230 may emit light with wavelengths between 495 nm and 575 nm.

The third semiconductor layer 1240 may include one or more epitaxial layers of the group III-nitride material and/or any other suitable material. For example, the third semiconductor layer 1240 can include an epitaxial layer of the group III-nitride material (also referred to as the “second epitaxial layer of the group III-nitride material”). The second doped layer of the group III-V material may be doped with a second conductive type impurity that is different from the first conductive type impurity. For example, the second conductive type impurity may be a p-type impurity. In some embodiments, the second epitaxial layer of the group III-V material may be doped with magnesium.

While certain layers of semiconductor materials are shown in FIG. 12, this is merely illustrative. For example, one or more intervening layers may or may not be deposited between the substrate 1210 and the first semiconductor layer 1220. One or more intervening layers may or may not be deposited between two semiconductor layers of FIG. 12 (e.g., between the first semiconductor layer 1220 and the second semiconductor layer 1230, between the second semiconductor layer 1230 and the third semiconductor layer 1240, etc.). In one implementation, a first surface of the first semiconductor layer 1220 may directly contact with a surface of the substrate 1210. The second semiconductor layer 1230 may be deposited directly on a second surface of the first semiconductor layer 1220. In another implementation, one or more intervening layers (not shown in FIG. 12) may be formed between the first semiconductor layer 1220 and the second semiconductor layer 1230. Alternatively or additionally, one or more intervening layers (not shown in FIG. 12) may be deposited between the first semiconductor layer 1220 and the substrate 1210. In some embodiments, the first semiconductor layer 1210 may include an undoped layer of the group III-nitride material. In some embodiments, the semiconductor device 1200 can include one or more layers of semiconductor materials and/or any other material that are formed on the third semiconductor layer 1240.

The semiconductor device 1200 can be used to produce light-emitting diodes, laser diodes, transistors, solar cells, and/or any other suitable semiconductor devices. The semiconductor device 1200 can be used to implement display applications, lighting applications, data storage applications, power electronic applications, communication applications, etc. In one implementation, a single light-emitting device may be fabricated using the semiconductor device 1200. In another implementation, multiple light-emitting devices and/or structures may be fabricated using the semiconductor device 1200. For example, as will be described in more detail in connection with FIG. 14, one or more arrays of light-emitting structures may be fabricated on the semiconductor device 1200. Each of the light-emitting structures may be a micro-size light-emitting diode (LED) (also referred to as the “micro-LED”). The micro-LED may have dimensions on the scale of micrometers. Each of the arrays may have any suitable number of light-emitting structures. The light-emitting structures may be arranged in one or more rows and/or columns or in any other suitable manner. Multiple arrays of light-emitting structures fabricated on the semiconductor device 1200 may or may not have the same number of light-emitting structures.

The semiconductor device 1200 may have any suitable dimensions to produce various applications. For example, the semiconductor device 1200 may have a certain chip area defined by a first side of the semiconductor device 1200 (e.g., a length) and a second side of the semiconductor device 1200 (e.g., a width). In one implementation, the semiconductor device 1200 may have a small chip area (e.g., a chip area that is equal to and/or smaller than a threshold (e.g., 22,500 μm², 90,000 μm², etc.)). In another implementation, the semiconductor device 1200 may have a large chip area (e.g., a chip area that is greater than the threshold. A side of the chip area of the semiconductor device 1200 may be less than 700 um in some embodiments.

FIGS. 13A, 13B, 13C, and 13D depict semiconductor structures associated with a process for fabricating a light-emitting device in accordance with some embodiments of the present disclosure. The light-emitting device may be and/or include light-emitting diodes, laser diodes, or any other device that is capable of emitting light. In some embodiments, one or more components of the light-emitting device (e.g., semiconductor layers 1220, 1230, and 1240) may be grown in a carrier gas of N₂ to retain smooth, facet-free surface morphology.

As illustrated in FIG. 13A, the first semiconductor layer 1220 may be formed on the substrate 1210. Forming the first semiconductor layer 1220 may include epitaxially growing a group III-nitride material on the substrate 1210 along a semipolar orientation (e.g., the first semipolar orientation) or a nonpolar orientation (e.g., the first nonpolar orientation). The group III-nitride material may be grown on the surface 1215 of the substrate 1210.

In some embodiments, the first semiconductor layer 1220 may be doped with a first conductive type impurity. The first conductivity impurity may be an n-type impurity in some embodiments. The first semiconductor layer 1220 may be formed by a suitable epitaxial growth process, such as an MOCVD process, an HVPE process, an MBE process, etc. One or more suitable first dopants (e.g., n-type dopants) may be introduced during the growth of the group-III nitride material to form the first semiconductor layer 1220. The first dopants may include, for example, germanium (Ge), silicon (Si), etc. A doping level of the first dopant(s) and/or a thickness of the first semiconductor layer 1220 may be controlled to achieve desired electrical and/or optical properties of the semiconductor device. In one implementation, a doping level of the first dopant(s) may be between 1×10¹⁸ cm⁻³ and 5×10¹⁹ cm⁻³. In another implementation, the doping level of the first dopant(s) may be, for example, between 5×10¹⁸ cm⁻³ and 1×10¹⁹ cm⁻³. A thickness of the first semiconductor layer 1220 and/or the first epitaxial layer may be between 1 μm and 2 μm in some embodiments. The thickness of the first semiconductor layer 1220 and/or the first epitaxial layer may be about 2 μm in some embodiments.

Referring to FIG. 13B, the second semiconductor layer 1230 may be grown on the first semiconductor layer 1220 (e.g., on the surface 1225 of the first semiconductor layer 1220). The second semiconductor layer 1230 may include an active layer comprising one or more quantum well structures. For example, as illustrated in FIG. 13B, the second semiconductor layer 1230 may include barrier layers 1331, 1333, and 1335, and quantum well layers 1332, 1334, and 1336. The barrier layers and the quantum well layers are alternately stacked on one another. Each of the barrier layers 1331, 1333, and 1335 may be and/or include a layer of GaN or any other suitable semiconductor material. A thickness of the barrier layers 1331, 1333, and 1335 may be between 5 nm and 25 nm. In some embodiments, the thickness of the quantum well layers 1332, 1334, and/or 1336 may be between 10 nm and 15 nm.

Each of the quantum well layers 1332, 1334, and 1336 may include a layer of InGaN or any other suitable semiconductor material comprising indium. Each of the quantum well layers 1332, 1334, and 1336 may comprise a certain amount of indium and/or have a certain thickness to achieve certain emission spectra. As an example, an indium composition of the quantum well layers 1332, 1334, and/or 1336 may be between 10% and 18%. A thickness of the quantum well layers 1332, 1334, and/or 1336 may be between 3 nm and 5 nm. In such an example, a light-emitting device including the quantum well layers 1332, 1334, and/or 1336 may be capable of emitting light with a peak wavelength between 420 nm and 480 nm. A thickness of the quantum well layers 1332, 1334, and/or 1336 may be between 2 nm and 15 nm. In some embodiments, the thickness of the quantum well layers 1332, 1334, and/or 1336 may be between 6 nm and 10 nm.

In some embodiments, the quantum well layers 1332, 1334, and/or 1336 may have a thickness between 3 nm and 6 nm and may include a suitable amount of indium to achieve desired emission wavelengths. As an example, an indium composition of the quantum well layers 1332, 1334, and/or 1336 may be between 4% and 17% to produce a light-emitting device that is capable of emitting light with a peak wavelength between 380 nm and 450 nm. As another example, an indium composition of the quantum well layers 1332, 1334, and/or 1336 may be between 17% and 23% to produce a light-emitting device that is capable of emitting light with a peak wavelength between 450 nm and 495 nm. As a further example, an indium composition of the quantum well layers 1332, 1334, and/or 1336 may be between 23% and 33% to produce a light-emitting device that is capable of emitting light with a peak wavelength between 495 nm and 570 nm. As still a further example, an indium composition of the quantum well layers 1332, 1334, and/or 1336 may be between 33% and 36% to produce a light-emitting device that is capable of emitting light with a peak wavelength between 570 nm and 590 nm. As still another example, an indium composition of the quantum well layers 1332, 1334, and/or 1336 may be between 36% and 40% to produce a light-emitting device that is capable of emitting light with a peak wavelength between 590 nm and 620 nm. As yet another example, an indium composition of the quantum well layers 1332, 1334, and/or 1336 may be between 40% and 52% to produce a light-emitting device that is capable of emitting light with a peak wavelength between 620 nm and 750 nm.

Referring to FIG. 13C, the third semiconductor layer 1240 may be grown on the second semiconductor layer 1230 along the first semipolar orientation or the first nonpolar orientation. For example, the third semiconductor layer 1240 may be epitaxially grown on the surface 1235 of the second semiconductor layer 1230. The third semiconductor layer 1240 may be formed by growing the group III-nitride material doped with a second conductive type impurity. The second conductive impurity may be a p-type impurity in some embodiments. The third semiconductor layer 1240 may be formed by a suitable epitaxial growth process, such as an MOCVD process, an HVPE process, an MBE process, etc. One or more suitable second dopants (e.g., p-type dopants) may be introduced during the growth of the group-III nitride material to form the third semiconductor layer 1240. The second dopants may include, for example, magnesium (Mg), etc. A doping level of the second dopant(s) and/or a thickness of the third semiconductor layer 1240 may be controlled to achieve desired electrical and/or optical properties of the semiconductor device. In one implementation, the doping level of the second dopant(s) may be between 1×10¹⁹ cm⁻³ and 3×10²⁰ cm⁻³. In another implementation, the doping level of the second dopant(s) may be between 3×10¹⁹ cm⁻³ and 5×10¹⁹ cm⁻³. The third semiconductor layer 1240 may have a certain thickness to achieve desired electrical and/or optical properties of the light emitting device. For example, the third semiconductor layer 1240 with a certain thickness (e.g., a thickness less than a threshold) may not provide sufficient holes for light emission. As another example, the third semiconductor layer 1240 with a certain thickness (e.g., a thickness greater than a threshold) may absorb a portion of light emitted from the second semiconductor layer 1230 and may thus deteriorate the performance of the light-emitting device. In some embodiments, a thickness of the third semiconductor layer 1240 may be between 50 nm and 300 nm. The third semiconductor layer 1240 may be grown to a thickness of about 150 μm.

Referring to FIG. 13D, the semiconductor device 1200 may be processed into a light-emitting device 1300. The semiconductor device 1200 may be etched to expose the first semiconductor layer 1230. A metal contact 1351 (e.g., a cathode) may then be deposited on the exposed first semiconductor layer 1320. A metal contact 1353 (e.g., an anode) may be deposited on the third semiconductor layer 1240. The contacts 1351 and 1353 may include any suitable metals. For example, the contacts 1351 and 1353 may include nickel (Ni) and gold (Au), respectively.

FIG. 14A illustrates a top view of an example light-emitting device 1410 in accordance with some embodiments of the present disclosure. As shown, a chip area of the light-emitting device 1410 may be defined by a first side L1 of the light-emitting device 1410 and a second side L2 of the light-emitting device 1410. The first side may or may not be the same as the second side. The first side and/or the second side may be of any suitable value. In some embodiments, the first side and/or the second side may be less than 700 um. In one implementation, the chip area defined by the first side and the second side may be equal to and/or smaller than a threshold (e.g., 22,500 μm², 90,000 μm², etc.). In another implementation, the chip area of the light-emitting device 1410 may be greater than the threshold (e.g., 22,500 μm², 90,000 μm², etc.).

The light-emitting device 1410 may include one or more structures described in connection with FIGS. 12-13D. In some embodiments, one or more portions of the chip area of the light-emitting device 1410 may be used to deposit one or more Ohmic contacts of the light-emitting device 1410. For example, as illustrated in FIG. 14A, areas 1413 and 1415 may be used to deposit a p-type contact and an n-type contact, respectively.

FIG. 14B illustrates a top view of an example light-emitting device 1420 in accordance with some embodiments of the present disclosure. As shown, a chip area of the light-emitting device 1420 may be defined by a first side L1 of the light-emitting device 1420 and a second side L2 of the light-emitting device 1420. The chip area of the light-emitting device 1420 may be the same as the light-emitting device 1410. The light-emitting device 1420 can include one or more arrays of light-emitting structures 1427. Each of the arrays may include a certain number of light-emitting structures arranged in one or more rows and columns. Multiple arrays of light-emitting structures of the light-emitting device 1420 may or may not have the same number of light-emitting structures.

Each of the light-emitting structures 1427 may include one or more epitaxial layers of a group III-nitride material (e.g., an n-doped GaN layer, a p-doped GaN layer, an undoped GaN layer, etc.), an active layer comprising one or more quantum well structures, and/or any other suitable component for light emission. The epitaxial layers, the active layer, etc. may be stacking-fault-free and/or substantially stacking-fault-free and may include the group III-nitride material oriented in a desired semipolar or nonpolar orientation (e.g., (2021), (2021), (3031), (3031), etc.). In some embodiments, each of the light-emitting structures 1427 may include one or more structures as described in connection with FIGS. 12 and 13D.

Each of the light-emitting structures 1427 may emit light with a peak emission wavelength between 200 nm and 700 nm. For example, each of the light-emitting structures 1427 may emit blue light (e.g., light with wavelengths between 450 nm and 495 nm), green light (e.g., light with wavelengths between 495 nm and 570 nm), yellow light (e.g., light with wavelengths between 570 nm and 590 nm), red light (light with wavelengths between 635 nm and 700 nm), etc. In some embodiments, one or more of the light-emitting structures 1427 may emit light with wavelengths between 500 nm and 550 nm. In some embodiments, one or more of the light-emitting structures 1427 may emit light with wavelengths between 400 nm and 550 nm. In some embodiments, one or more of the light-emitting structures 1427 may emit light with wavelengths between 495 nm and 575 nm.

Each of the light-emitting structures 1427 may be and/or include a micro-LED (μLED) having dimensions on the scale of micrometers. In one implementation, a diameter of the micro-LED may be approximately 5-25 μm. In another implementation, a diameter of the micro-LED may be greater than 25 μm or smaller than 5 μm. A pixel pitch between two light-emitting structures 1427 (e.g., two adjacent light-emitting structures 1427) may be 20 μm, 25 μm, or of any other suitable value. In some embodiments, the pixel pitch may be equal to or greater than 20 μm. The pixel pitch may represent a distance between the light-emitting structures (e.g., a distance between a center of a first light-emitting structures and a center of a second light-emitting structure, a distance between a side of the first light-emitting structure and a side of the second light-emitting structure, etc.).

One or more portions of the light-emitting device 1420 may be used to provide one or more n-type contacts and/or p-type contacts for the light-emitting structures 1427. For example, an area 1423 of the light-emitting device 1420 may be used to deposit a p-type contact pad which can connect the p-type Ohmic contacts for current injection. As another example, an area 1425 of the light-emitting device 1420 may be used to deposit an n-type contact pad. In some embodiments, the light-emitting structures 1427 may be individually addressable. For example, each individual light-emitting structure 1427 may an independent p-contact. In some embodiments, two or more light-emitting structures 1427 may share a p-contact or n-contact.

In some embodiments, two or more of the light-emitting structures 1427 may be connected. For example, an n-contact of a first light-emitting structure 1427 may be connected to a p-contact of a second light-emitting structure 1427 so that the first and the second light-emitting structures are connected in series.

FIG. 15 is a flow diagram illustrating an example 1500 of a method for fabricating a light-emitting device according to some embodiments of the disclosure. Method 1500 may be implemented to fabricate the semiconductor device 1200 of FIG. 12 and/or the light-emitting device 1300 of FIG. 13 in some embodiments.

Method 1500 may begin at block 1510 where a group III-nitride substrate may be obtained. The group III-nitride substrate may be a non-polar or semipolar substrate. For example, the group III-nitride substrate may contain a group III-nitride material (e.g., GaN) having a semipolar orientation (e.g., the first semipolar orientation) or a nonpolar orientation (e.g., the first nonpolar orientation). A surface of the group III-nitride substrate may be parallel to or approximately parallel to a certain semipolar or nonpolar plane (e.g., the first semipolar plane or the first nonpolar plane). The group III-nitride substrate may be free of or substantially free of stacking faults. A diameter of the group III-nitride substrate may be equal to or greater than 2 inches in some embodiments. The group III-nitride substrate may be and/or include the growth template 110 of FIGS. 1A-1C, the substrate 130 of FIGS. 1A-1C, the substrate 1210 of FIG. 12, etc. In some embodiments, the group III-nitride substrate may be obtained by performing one or more operations described in connection with FIGS. 1A-11.

In some embodiments, the group III-nitride substrate may be prepared in a reactor for the fabrication of the light-emitting device. The preparation process may include heating the substrate to a desired temperature in a hydrogen ambient or any other suitable ambient. The desired temperature may be any temperature within a range of desired temperatures (e.g., a temperature between approximately 1100° C. and approximately 1200° C.).

At block 1520, a semiconductor structure may be formed on the group III-nitride substrate to produce the light-emitting device. The semiconductor structure may include semipolar or nonpolar group III-nitride materials (e.g., GaN with the first semipolar orientation or the first nonpolar orientation). The semiconductor structure may be and/or include the semiconductor device 1200 as described in conjunction with FIG. 12. In some embodiments, the semiconductor structure may be formed by performing one or more operations depicted in blocks 1522, 1524, and 1526.

At block 1522, a first semiconductor layer may be formed on the group III-nitride substrate. Forming the first semiconductor layer may involve growing one or more epitaxial layers of the group III-nitride material and/or any other suitable material along a certain semipolar or nonpolar orientation, such as the first semipolar orientation or the first nonpolar orientation. For example, a first epitaxial layer of the group III-nitride material may be formed by epitaxially growing the group III-nitride material along the first semipolar orientation or the first nonpolar orientation. In some embodiments, the first semiconductor layer and/or the first epitaxial layer of the group III-nitride material may be grown on a surface of the group III-nitride substrate that exposes a semipolar plane or nonpolar plane (e.g., the surface 134 of FIG. 1C, the process surface 125 of FIGS. 1A-1C, the surface 1215 of FIG. 12) without introducing stacking faults. The first epitaxial layer and/or any other layer of the first semiconductor layer may be grown to a size that is the same as and/or substantially the same as the size of the group III-nitride substrate (e.g., to achieve a diameter of the first semiconductor layer that is equal to or greater than 2 inches).

Growing the first epitaxial layer of the group III-nitride material may involve doping the first epitaxial layer of the group III-nitride material to have a desired conductivity (e.g., an n-type conductivity). In one implementation, doping may be performed during the epitaxial growth of one or more portions of the first epitaxial layer of the group III-nitride material. In another implementation, doping can be performed after the epitaxial growth of the first epitaxial layer (e.g., using ion implantation into the first epitaxial layer of the group III-nitride material).

The first semiconductor layer and/or the first epitaxial layer may be grown by providing flows of suitable precursors to a reactor and using thermal processes to achieve deposition. The precursors may include, for example, a first precursor containing a first group III-material, a second precursor containing a group V material, and a first dopant precursor containing a first conductive type impurity (e.g., an n-type impurity). For example, a GaN layer may be deposited using gallium and nitrogen containing precursors. Examples of the first precursor may include trimethylgallium (TMGa), triethylgallium (TEGa), and/or any other suitable source of gallium. Examples of the second precursor may include ammonia (NH₃), phenylhydrazine, and/or any other suitable source of nitrogen. Examples of the first dopant precursor may include silane (SiH₄).

The first epitaxial layer of the group III-nitride material may be grown under certain growth conditions (also referred to as the “first growth conditions”) using MOCVD, MBE, HVPE, and/or any other suitable epitaxial growth method. For example, the first epitaxial layer of the group III-nitride material may be grown at a first growth temperature (e.g., a temperature between approximately 900° C. and approximately 950° C.). N₂ may be provided to the reactor as a carrier gas. The first precursor (e.g. TMGa) may be provided to the reactor at a flow rate that is between 20 μmol/min (micro-mole per minute) and 1000 μmol/min, or between approximately these values. The dopant precursor (e.g., SiH₄) may be provided to the reactor at a flow rate between 0.0001 μmol/min and 0.1 μmol/min, or between approximately these values. The first epitaxial layer of the group III-nitride material may be grown to a desired thickness (e.g., 1-2 μm). The precursors (e.g., the first precursor, the second precursor, and/or the first dopant precursor) may be supplied for a suitable period of time to achieve deposition of the first epitaxial layer of the desired thickness. The period of time may be determined based on the flow rate of each of the precursors.

At block 1524, a second semiconductor layer may be formed on the first semiconductor layer. The second semiconductor layer may be grown in a semipolar or nonpolar orientation, such as the first semipolar orientation or the first nonpolar orientation. For example, the second semiconductor layer may be grown on a surface of the first semiconductor layer that is parallel to and/or approximately parallel to a semipolar plane or nonpolar plane (e.g., the surface 1225 of FIG. 12).

The formation of the second semiconductor layer may involve forming an active layer comprising one or more quantum well structures. Each of the quantum well structures may be and/or include a single quantum well structure and/or a multi-quantum well (MQW) structure. Forming the quantum well structures may include forming a plurality of quantum well layers and barrier layers (e.g., the quantum well layers 1332, 1334, and 1336, and the barrier layers 1331, 1333, and 1333 as described in connection with FIG. 13B). Forming the quantum well layers may include providing, to the reactor, a precursor containing the first group III material (e.g., the first precursor), a precursor containing a group V material (e.g., the second precursor containing nitrogen), and a third precursor containing a second group III material. The third precursor may include, for example, trimethylindium (TMIn), triethylindium (TEIn), and/or any other suitable source of indium. Forming the barrier layers may include providing, to the reactor, a precursor containing the first group III material (e.g., the first precursor) and a precursor containing a group V material (e.g., the second precursor containing nitrogen).

As described above, the growth of the first semiconductor layer on the group III-nitride substrate does not introduce stacking faults. As such, the first semiconductor layer may be free of and/or substantially free of stacking faults. Growing the second semiconductor layer on the first semiconductor layer does not introduce stacking faults.

At block 1526, a third semiconductor layer may be formed on the second semiconductor layer. Forming the third semiconductor layer may involve growing one or more epitaxial layers of the group III-nitride material along a semipolar or nonpolar orientation, such as the first semipolar orientation or the first nonpolar orientation. For example, a second epitaxial layer of the group III-nitride material may be formed by epitaxially growing the group III-nitride material along the first semipolar orientation or the first nonpolar orientation. In some embodiments, the third semiconductor layer and/or the second epitaxial layer of the group III-nitride material may be grown on a surface of the second semiconductor layer that is parallel to and/or approximately parallel to the first semipolar plane or the first nonpolar plane (e.g., the surface 1235 of FIG. 12). As described above, the growth of the second semiconductor layer on the first semiconductor layer does not introduce stacking faults. As such, the second semiconductor layer may be free of and/or substantially free of stacking faults. Growing the third semiconductor layer on the second semiconductor layer does not introduce stacking faults.

Growing the second epitaxial layer of the group III-nitride material may involve doping the second epitaxial layer of the group III-nitride material to have a desired conductivity (e.g., a p-type conductivity). In one implementation, doping may be performed during the epitaxial growth of one or more portions of the second epitaxial layer of the group III-nitride material. In another implementation, doping can be performed after the epitaxial growth of the second epitaxial layer (e.g., using ion implantation into the second epitaxial layer of the group III-nitride material).

The second epitaxial layer of the group III-nitride material may be grown using MOCVD, MBE, HVPE, and/or any other suitable epitaxial growth method. The third semiconductor layer may be grown by providing flows of suitable precursors to a reactor and using thermal processes to achieve deposition. The precursors may include, for example, the first precursor, the second precursor, and a second dopant precursor containing a second conductive type impurity (e.g., an n-type impurity). For example, a p-doped GaN layer may be deposited using precursors containing gallium, nitrogen, and magnesium. Examples of the second dopant precursor may include bis(cyclopentadienyl)magnesium (Cp₂Mg).

The second epitaxial layer of the group III-nitride material may be grown under certain growth conditions (also referred to as the “second growth conditions”). For example, the second epitaxial layer of the group III-nitride material may be grown at a second growth temperature (e.g., a temperature between approximately 900° C. and approximately 1000° C.). N₂ may be provided to the reactor as a carrier gas. In one implementation, the first precursor (e.g. TMGa) may be provided to the reactor at a flow rate that is between 20 μmol/min (micro-mole per minute) and 1000 μmol/min, or between approximately these values. The second dopant precursor (e.g., Cp₂Mg) may be provided to the reactor at a flow rate between 0.1 μmol/min and 100 μmol/min, or between approximately these values.

The second epitaxial layer of the group III-nitride material may be grown to a desired thickness (e.g., 50-300 nm). In one implementation, the thickness of the second epitaxial layer of the group III-nitride material may be approximately 150 nm. The first precursor, the second precursor, and/or the second dopant precursor may be supplied for a suitable period of time to achieve deposition of the second epitaxial layer of the desired thickness. The period of time may be determined based on the flow rate of each of the precursors. In one implementation, the precursors may be provided to the reactor for 10-30 minutes to achieve the desired thickness of the second epitaxial layer of the group III-nitride material.

At block 1530, the semiconductor device may be processed to produce the light-emitting device. For example, the semiconductor structure may be processed using photolithography and inductively coupled plasma etching techniques to expose a portion of the first semiconductor layer (e.g., a portion of the first epitaxial layer of the group III-nitride material). A first metal contact and a second metal contact may be deposited on the exposed first semiconductor layer and the third semiconductor layer, respectively. The first metal contact may comprise Ni or any other suitable metal for providing an n-type contact. The second metal contact may comprise Au or any other suitable metal for providing a p-type contact.

FIG. 16A depicts an I-V curve showing current-voltage characteristics of a light-emitting device in accordance with some embodiments of the present disclosure. The light-emitting device may be fabricated by performing one or more operations described in connection with FIGS. 12-15 above. The light-emitting device may be a blue light-emitting device (e.g., a light-emitting device that is capable of emitting light with a peak wavelength between 450 nm and 495 nm). The light-emitting device may include an active layer comprising InGaN. As illustrated, a turn-on voltage of the light-emitting device is approximately 3.5 V. A reverse leakage current in the light-emitting device may be equal to or less than 10⁻⁶ A when a reverse bias of −5 V is applied to the light-emitting device. The low reverse leakage current may be attributed to the low defect density in the semipolar or nonpolar group III-nitride materials in the light-emitting device. Accordingly, the mechanisms disclosed herein can provide high-efficiency and high-brightness light-emitting devices that overcome the efficiency droop, QCSE, and other issues of the conventional LEDs.

FIG. 16B is a graph illustrating electroluminescence (EL) spectra of a light-emitting device in accordance with some embodiments of the present disclosure. The light-emitting device may be a blue LED. The EL spectra are shown in FIG. 16B with an increasing injection level from 20 mA to 140 mA under pulsed conditions. As illustrated, the LED may emit light with a peak wavelength of about 450 nm.

For simplicity of explanation, the methods of this disclosure are depicted and described as a series of acts. However, acts in accordance with this disclosure can occur in various orders and/or concurrently, and with other acts not presented and described herein. Furthermore, not all illustrated acts may be required to implement the methods in accordance with the disclosed subject matter. In addition, those skilled in the art will understand and appreciate that the methods could alternatively be represented as a series of interrelated states via a state diagram or events. Additionally, it should be appreciated that the methods disclosed in this specification are capable of being stored on an article of manufacture to facilitate transporting and transferring such methods to computing devices. The term “article of manufacture,” as used herein, is intended to encompass a computer program accessible from any computer-readable device or memory page media.

The terms “approximately,” “about,” and “substantially” may be used to mean within ±20% of a target dimension in some embodiments, within ±10% of a target dimension in some embodiments, within ±5% of a target dimension in some embodiments, and yet within ±2% in some embodiments. The terms “approximately” and “about” may include the target dimension.

In the foregoing description, numerous details are set forth. It will be apparent, however, that the disclosure may be practiced without these specific details. In some instances, well-known structures and devices are shown in block diagram form, rather than in detail, in order to avoid obscuring the disclosure.

The terms “first,” “second,” “third,” “fourth,” etc. as used herein are meant as labels to distinguish among different elements and may not necessarily have an ordinal meaning according to their numerical designation.

The words “example” or “exemplary” are used herein to mean serving as an example, instance, or illustration. Any aspect or design described herein as “example” or “exemplary” is not necessarily to be construed as preferred or advantageous over other aspects or designs. Rather, use of the words “example” or “exemplary” is intended to present concepts in a concrete fashion. As used in this application, the term “or” is intended to mean an inclusive “or” rather than an exclusive “or”. That is, unless specified otherwise, or clear from context, “X includes A or B” is intended to mean any of the natural inclusive permutations. That is, if X includes A; X includes B; or X includes both A and B, then “X includes A or B” is satisfied under any of the foregoing instances. In addition, the articles “a” and “an” as used in this application and the appended claims should generally be construed to mean “one or more” unless specified otherwise or clear from context to be directed to a singular form. Reference throughout this specification to “an implementation” or “one implementation” means that a particular feature, structure, or characteristic described in connection with the implementation is included in at least one implementation. Thus, the appearances of the phrase “an implementation” or “one implementation” in various places throughout this specification are not necessarily all referring to the same implementation.

As used herein, when an element or layer is referred to as being “on” another element or layer, the element or layer may be directly on the other element or layer, or intervening elements or layers may be present. In contrast, when an element or layer is referred to as being “directly on” another element or layer, there are no intervening elements or layers present.

Whereas many alterations and modifications of the disclosure will no doubt become apparent to a person of ordinary skill in the art after having read the foregoing description, it is to be understood that any particular embodiment shown and described by way of illustration is in no way intended to be considered limiting. Therefore, references to details of various embodiments are not intended to limit the scope of the claims, which in themselves recite only those features regarded as the disclosure. 

What is claimed is:
 1. A light-emitting device, comprising: a first semiconductor layer comprising a first epitaxial layer of a group III-nitride material, wherein a surface of the first epitaxial layer of the group III-nitride material is approximately parallel to a semipolar plane of the group III-nitride material, and wherein the first epitaxial layer of the group III-nitride material is free of stacking faults; and a second semiconductor layer comprising at least one quantum well structure, wherein a surface of the second semiconductor layer is approximately parallel to the semipolar plane of the group III-nitride material.
 2. The light-emitting device of claim 1, wherein the semipolar plane comprises at least one of a (2021) plane, a (2021) plane, a (3031) plane, or a (3031) plane.
 3. The light-emitting device of claim 2, wherein the second semiconductor layer comprises an active layer for emitting light with a peak emission wavelength between 400 nm and 550 nm.
 4. The light-emitting device of claim 2, wherein the second semiconductor layer comprises an active layer for emitting light with a peak emission wavelength of 450 nm.
 5. The light-emitting device of claim 1, wherein a diameter of the first semiconductor layer is equal to or greater than 2 inches.
 6. The light-emitting device of claim 1, further comprising a third semiconductor layer comprising a second epitaxial layer of the group III-nitride material, wherein the first epitaxial layer of the group III-nitride material is doped with a first conductive type impurity, and wherein the second epitaxial layer of the group III-nitride material is doped with a second conductive type impurity.
 7. The light-emitting device of claim 6, wherein the second semiconductor layer is positioned between the first semiconductor layer and the third semiconductor layer.
 8. The light-emitting device of claim 1, wherein the group III-nitride material comprises gallium.
 9. The light-emitting device of claim 1, wherein the quantum well structure comprises a plurality of quantum well layers comprising indium and a plurality of barrier layers.
 10. The light-emitting device of claim 1, wherein the second semiconductor layer is free of stacking faults.
 11. The light-emitting device of claim 1, wherein a reverse leakage current in the light-emitting device is equal to or less than 10⁻⁶ A when a reverse bias of −5 V is applied to the light-emitting device.
 12. A method for fabricating a light-emitting device, comprising: growing, on a group III-nitride substrate comprising a group III-nitride material, a first semiconductor layer comprising the group III-nitride material along a semipolar orientation; and growing, on the first semiconductor layer of the group III-nitride material, a second semiconductor layer along the semipolar orientation, the second semiconductor layer comprising at least one quantum well structure.
 13. The method of claim 12, wherein the semipolar orientation comprises at least one of (2021), (2021), (3031), or (3031).
 14. The method of claim 13, wherein growing the second semiconductor layer comprises growing an active layer for emitting light with a peak emission wavelength between 400 nm and 550 nm.
 15. The method of claim 13, wherein growing the second semiconductor layer comprises growing an active layer for emitting light with a peak emission wavelength of 450 nm.
 16. The method of claim 12, wherein growing the quantum well structure comprises growing a plurality of quantum well layers comprising indium and a plurality of barrier layers.
 17. The method of claim 12, wherein growing the first semiconductor layer comprises growing the group III-nitride material along the semipolar orientation without introducing stacking faults.
 18. The method of claim 12, further comprising: growing, on the second semiconductor layer, a third semiconductor layer comprising the group III-nitride material along the semipolar orientation, wherein growing the third semiconductor layer comprises growing the group III-nitride material along the semipolar orientation without introducing stacking faults.
 19. The method of claim 18, wherein growing the first semiconductor layer comprises growing a first epitaxial layer of the group III-nitride material doped with a first conductive type impurity, and wherein growing the third semiconductor layer comprises growing a second epitaxial layer of the group III-nitride material doped with a second conductive type impurity.
 20. The method of claim 12, wherein the group III-nitride material comprises gallium. 